1999
DOI: 10.1557/jmr.1999.0435
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Studies of electron energy loss near edge structure at the interface between Si and amorphous carbon films deposited by direct carbon ion beams

Abstract: Using direct carbon ion beam deposition, in situ surface modification was performed by an energetic C − beam (400 and 500 eV) prior to amorphous carbon film growth to enhance adhesion of the film. It has been found from high-resolution electron microscopy that the C and Si mixing layer at the interface causes strong adhesion of the film. Electron energy loss spectroscopy was used to investigate chemical states of the C and Si mixing layer at the interface. The carbon composition profile in silicon showed that … Show more

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