The electrical conductivity and Raman spectroscopy measurements have been performed on MoS2 at high pressures up to 90 GPa and variable temperatures down to 5 K. We find that the temperature dependence of the resistance in a metallic 2H a phase has an anomaly (a hump) which shifts with pressure to higher temperature. Concomitantly, a new Raman phonon mode appears in the metallic state suggesting that the electrical resistance anomaly may be related to a structural transformation. We suggest that this anomalous behavior is due to a charge density wave state, the presence of which is indicative for a possibility for an emergence of superconductivity at higher pressures. PACS numbers: 73.90.+f, 71.30.+h, 71.45.Lr Two-dimensional (2D) materials are characterized by a strong anisotropy of the intra-versus inter-layer bonding. This remarkable difference brings up unique notions such as 2D materials which can be exploited for practical applications [1]. One of the most exposed materials of such a kind is graphene [1,2], which also brought the interests to inorganic materials with unique electronic [3], optical [4] attributes and high mobility [5]. However, graphene is a gapless (semimetallic) material which restricts its possible applications. In contrast, the transition-metal dichalcogenides (TMDs), quasi-2D material with distinct structures and unique physical properties [6-10], possess a non-zero band gap that could also be tuned. Therefore, TMDs are currently attracted enormous research interests. MoS 2 is one of the most extensively investigated member of TMDs, and it can be prepared as a 2D material via mechanical exfoliation [4,11]. By varying the number of layers, MoS 2 can be transformed from an indirect band-gap semiconductor to a direct band-gap semiconductor [11]. Monolayer MoS 2 has mechanical properties almost as good as graphene, but unlike graphene, possesses a direct bandgap. Thus, MoS 2 shows an excellent potential to replace graphene in the next generation nanoelectronics applications [12][13][14][15][16]. Furthermore, doping of 2D MoS 2 has been shown to change the electronic and structural properties dramatically that results to metallization, formation of the charge density wave (CDW) [17] and eventually superconducting states [18,19]. Similar structural effects related to 2H to 1T transition (from trigonal to octahedral TM coordination) have been found in other doped TMDs (MoTe 2 ), confirmed by Raman spectroscopy measurements [20] including the case when 1T phase has been stabilized by pressure and superconductivity appears accordingly [21].The application of external pressure is an alternative (to doping) way to tune the electronic as well as crystal structure. MoS 2 transforms from 2H c to 2H a phase (through a sliding of the layers) above 20 GPa along with a metallization [22,23]. However, the resistivity measurements show that the temperature dependence of the resistivity is not monotonous in both semiconducting and metallic regimes revealing a pressure dependent hump in the resistivity−te...