Studies of Quantum Dots Fabricated by Combining Aerosol and Plasma Etching Techiques

Samuelson, Lars; Maximov, Ivan; Gustafsson, Anders; Xiao, Lan; Seifert, Werner; Hansson, Hans‐Christen; Wiedensohler, Alfred

doi:10.1557/proc-283-789

Cited by 3 publications

(1 citation statement)

References 12 publications

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“…[9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26] The removal of indium is the result of both physical sputtering by argon, and the formation of volatile indium alkyl species formed by the reaction of surface indium with methane dissociation products. [9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26] The removal of indium is the result of both physical sputtering by argon, and the formation of volatile indium alkyl species formed by the reaction of surface indium with methane dissociation products.…”

Section: B Hydrogen/methane/argon Etchingmentioning

confidence: 99%

Treatment of InP surfaces in radio frequency H2 and H2/CH4/Ar plasmas: In situ compositional analysis, etch rates, and surface roughness

Parmeter

Shul

Howard

et al. 1996

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Sidewall and surface induced damage comparison between reactive ion etching and inductive plasma etching of InP using a CH4/H2/O2 gas mixtureThe surface composition, etch rates, and surface roughness of indium phosphide ͑InP͒ surfaces treated in radio frequency ͑rf͒ hydrogen and hydrogen/argon/methane plasmas have been investigated using in situ Auger spectroscopy and ex situ scanning electron microscopy and atomic force microscopy. In agreement with most previous studies, hydrogen plasmas are found to completely remove surface carbon and oxygen impurities, but at the expense of some degree of surface phosphorus depletion. This depletion can be minimized by utilizing brief plasma exposure times and low rf power settings. Oxygen removal is found to be rate limiting in the production of a clean surface. InP etching in hydrogen/argon/methane can be performed either in a low density, capacitively coupled plasma mode, or in a high density, inductively coupled plasma mode. For operation in the low density regime, the etched surfaces have a constant and nearly stoichiometric composition, independent of plasma parameters. Etch rates vary from ϳ20-400 Å/min, while the root mean square ͑rms͒ surface roughness varies from ϳ20 to Ͼ400 Å. Both of these quantities show definite trends with changing plasma parameters, and, in particular, high etch rates and low surface roughness are both favored by increasing total plasma pressure and methane flow rate. Within the ranges studied, the etch rate is most strongly affected by the amount of hydrocarbon species reaching the surface, which can remove indium in the form of indium alkyl products. However, sputtering effects are also shown to be significant. Etching InP in the high density plasma mode gives an etch rate of ϳ700 Å/min, but only at the expense of severe surface phosphorus depletion and rms surface roughness of ϳ2000 Å. The breakdown of methane within the plasma under these conditions may serve to inhibit indium alkyl formation, and hence lead to the observed phosphorus depletion.

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Section: B Hydrogen/methane/argon Etchingmentioning

confidence: 99%

Treatment of InP surfaces in radio frequency H2 and H2/CH4/Ar plasmas: In situ compositional analysis, etch rates, and surface roughness

Parmeter

Shul

Howard

et al. 1996

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Sintered aerosol masks for dry-etched quantum dots

Deppert

Maximov

Samuelson

et al. 1994

Applied Physics Letters

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We report on a sintering step in producing ultra-fine silver aerosol particles to serve as etch masks for semiconductor quantum-dot structures. Our experiments found heating conditions that reshape the Ag particles, resulting in a spherical shape and very good size uniformities. Using this improved aerosol generation technology, we have dry etched InP columns with 24+5 run diameter and with very good uniformity, with nearly every aerosol particle resulting in a column. Column arrays with a density as high as 3X10' cm-' could be produced.

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Characterization of InP/GaInAs Nanometer Sized Columns Produced by Aerosol Deposition and Plasma Etching

et al. 1994

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We present a technique for the fabrication of InP nano-columns and GaInAs/InP quantum-dots based on the use of sintered aerosol Ag particles as a mask in an electron cyclotron resonance etching process. The sintered particles have much more regular shapes than the unsintered ones used in previous studies and are more resistant to the etching environment, which results in the formation of more regular and reproducible structures. For example, we have been able to produce columns 100 nm in height which have an average diameter of 24 nm and a density of 109 cm−2.We have investigated the shape of the etched columns as a function of the Ag particles’ size, and characterized their electrical and optical properties using a combination of scanning electron microscopy, scanning tunneling microscopy, atomic force microscopy, and photoluminescence.

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Studies of Quantum Dots Fabricated by Combining Aerosol and Plasma Etching Techiques

Cited by 3 publications

References 12 publications

Treatment of InP surfaces in radio frequency H2 and H2/CH4/Ar plasmas: In situ compositional analysis, etch rates, and surface roughness

Treatment of InP surfaces in radio frequency H2 and H2/CH4/Ar plasmas: In situ compositional analysis, etch rates, and surface roughness

Sintered aerosol masks for dry-etched quantum dots

Characterization of InP/GaInAs Nanometer Sized Columns Produced by Aerosol Deposition and Plasma Etching

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