Discharge gas trapping in thin films produced by sputtering is known to be due to high energy neutrals bouncing back from the cathode. Qualitatively, the phenomenon is enhanced by raising the discharge voltage and is strongly dependent on the atomic masses of the discharge gas and of the cathode material. In addition to these known effects it is shown that, for a given gas, the trapped amount decreases with increasing the melting temperature of the deposited material. The results obtained both by sample melting and laser ablation are presented and discussed.
Paper presented at the 6th European Vacuum Conference University Lyon 1, Campus La Doua/IPNL, Lyon, France 7-10 December 1999 To be published in "Vacuum"
Geneva, SwitzerlandDecember 1999* ITC-irst, 38050 Povo TN, Italy -2 -
INTRODUCTIONIncorporated sputter gas is often the main impurity found in thin metallic films deposited by sputtering under UHV conditions. Sputtering ions may be neutralised on arriving at the target and be backscattered from it, with an energy which depends mainly on their incident energy and on the target-to-gas atomic mass ratio 1, 2 . This phenomenon results both in mechanical bombardment of the growing film, which influences its crystallographic properties and its adhesion to the substrate, and in gas incorporation. Gas incorporation influences in turn most of the mechanical and electrical characteristics of the film, and controlling its amount allows to fine-tune the film properties, as it has been done for example in the case of superconducting niobium films 3 . Extensive Monte-Carlo calculations are available in literature to estimate the reflection probability and the energy of the reflected atoms for any gas-target combination, as well as the "burial probability" of the gas atoms 4,5 . These data alone are however not sufficient for an easy calculation of the quantity of gas incorporated into a film in a specific coating process. In particular, the precise geometry of the sputtering apparatus, the mean free path of the gas atoms and the nature and the temperature of the substrate on which the film is grown play a determinant role which has to be accounted for separately. Direct measurement of the gas content of films is necessary for estimating these contributions.In this paper, first results of a study of the influence of coating parameters on the gas content of films made with transition metals belonging to the 4a, 5a, 6a columns of the periodic table are presented. The variables explored are the sputtering voltage, the type of sputter gas and its pressure, and the temperature of the films, in planar and in cylindrical magnetron sputtering systems. Preliminary data on the gas contents of films made of ternary alloys of these transition metals are also presented.
EXPERIMENTAL PROCEDUREMost of the samples discussed in this paper have been produced using a bakeable, UHV planar magnetron system, with a target 150 mm in diameter and a target-to-substrate distance of 65 mm. The samples, 10 mm x 10 mm in size, have been posit...