Studies of Safe Operating Area of InGaP/GaAs Heterojunction Bipolar Transistors

Lee, Chien-Ping; Tao, N.; Lin, Barry

doi:10.1109/ted.2014.2303981

Cited by 9 publications

(9 citation statements)

References 10 publications

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“…3. The solid red dots are the failure points where the J c exhibits bent-over or snapback which is identical to the measurement [4, 7]. The boundary of SOA that is formed with these failure points demonstrates two distinct regions as experimentally shown in Fig.…”

Section: Resultssupporting

confidence: 75%

“…At low current and high voltage, however, the current usually bends up before it fails. The analytical modeling in [7] has successfully demonstrated the same phenomenon as observed experimentally. It shows that at low voltage and high current, the failure is controlled by the impact ionization because of the Kirk effect induced breakdown (KIB) (Kirk effect occurs when the mobile carrier density exceeds the space charge density in the collector causing the base push-out and electric field reversal [8]), and at low current and high voltage, the failure is governed by the self-heating effect.…”

Section: Introductionmentioning

confidence: 56%

“…The coefficient values are based on the reported data [13] but adjusted according to our breakdown measurement. To verify the aforementioned ii model we performed BV cbo (emitter opened) simulation and the collector current exhibits very steep increase at collector voltage of ~24 V, which is aligned with our BV cbo breakdown voltage (24 − 25 V) in manufacturing [7].…”

Section: D Simulation Setupmentioning

confidence: 70%

“…2. The epi-layers are typical in the industry as described in [7]. The substrate thickness is 300 µm and lateral width on one side is 200 µm, which emulates the real device die under test.…”

Section: D Simulation Setupmentioning

confidence: 99%

“…Recently, the SOAs of industrially fabricated InGaP/GaAs HBTs have been intensively studied [4, 7]. A typically measured SOA boundary under DC operation for an intrinsic device (with no added ballasting resistors) is shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

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Study on mechanisms of InGaP/GaAs HBT safe operating area using TCAD simulation

Tao

Lin

Lee

et al. 2015

Int. J. Microw. Wireless Technol.

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The safe operating area (SOA) of InGaP/GaAs heterojunction bipolar transistors has been studied using two-dimensional Technology Computer-Aided Design (TCAD) tool. Comprehensive physical models, including hydrodynamic transport-based impact ionization and self-heating models were implemented. The simulations for two DC modes (constant Iband Vbmodes) captured all the SOA features observed in measurements and some failure mechanisms were revealed for the first time by TCAD simulations. The simulated results are also in agreement with analytical modeling. The simulation not only gives us insight to the detailed failure mechanisms, but also provides guidance for the design of devices with better ruggedness and improved SOA performances.

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Section: Resultssupporting

confidence: 75%

Section: Introductionmentioning

confidence: 56%

Section: D Simulation Setupmentioning

confidence: 70%

Section: D Simulation Setupmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Study on mechanisms of InGaP/GaAs HBT safe operating area using TCAD simulation

Tao

Lin

Lee

et al. 2015

Int. J. Microw. Wireless Technol.

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CMOS power amplifier design for cellular applications

Kim

2016

RF and Mm-Wave Power Generation in Silicon

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2D numerical simulation for InGaP/GaAs HBT safe operating area

Lin

Tao²,

Lee³

et al. 2014

2014 9th European Microwave Integrated Circuit Conference

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Microwaves play a huge role in space technology. Virtually all communications with vehicles for space exploration is carried on with microwaves. Microwave remote sensing is a field driven by advances in space technique and sensor design. Space-based solar power systems convert sunlight to microwaves outside the atmosphere. However, one of the most fascinating field of microwave study in space concerns with the mysteries of the origin and evolution of the Universe and the fundamental laws on the Nature. Sensitive receivers detect the microwave radiation from stars, galaxies and, specially, the cosmic microwave energy from the Big Bang. The observation of microwaves emission from Ultra-High Energy Cosmic Rays showers has opened a golden channel for the detection of these particles, promising messengers of the world of the Strings and Dark Matter. 12:15h -13:00h Microwave Sensors and Technologies for Earth ObservationLuigi Pasquali, CEO of Telespazio, Italy&FranceThe deployment of a number of microwave sensors for Earth Observation from satellite characterized last decade and as well as the next few years the launch of Copernicus sentinels. A variety of sensors to contribute to a better knowledge of our Earth with remarkable fall outs in terms of scientific application and commercial services. The speech will give a quick overview focusing the key role of microwave technologies and the remarkable positioning of European actors. MONDAY AbstractThis full-day course addresses the fundamental topic of stability in nonlinear microwave circuits and networks (MCNs), covering concepts, qualitative analysis, simulation, and engineering design. The many unique qualitative behaviors possible in commonly used nonlinear MCNs will be illustrated, as well as the fundamental means by which these behaviors can abruptly arise with parameter changes (termed a bifurcation). Course attendees will learn about different types of steady-state solutions, identify instability problems through small-and large-signal stability analysis in the time/ frequency domains, and understand the dynamical mechanisms responsible for instabilities. The primary approaches for stability analysis will be presented and compared, ranging from the familiar and often inadequate (e.g., Rollet factor, stability circles) to the advanced that can be implemented using classical harmonic balance methods. The most common bifurcations will be described, enabling designers to confidently identify them in measurement and simulation. Practical examples of instability, stability analysis, and stabilization design will be presented for such important nonlinear circuits as power amplifiers, frequency multipliers/dividers, and voltage-controlled oscillators. Other advanced topics covered include stability analysis for modulated signals and of coupled oscillators. Finally, the vast research area on harnessing nonlinear dynamics for useful engineering purposes will be surveyed, providing a glimpse into future nonlinear designs. The course will include video/hardware demonstra...

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Studies of Safe Operating Area of InGaP/GaAs Heterojunction Bipolar Transistors

Cited by 9 publications

References 10 publications

Study on mechanisms of InGaP/GaAs HBT safe operating area using TCAD simulation

Study on mechanisms of InGaP/GaAs HBT safe operating area using TCAD simulation

CMOS power amplifier design for cellular applications

2D numerical simulation for InGaP/GaAs HBT safe operating area

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