Studies of Si segregation in GaAs using current–voltage characteristics of quantum well infrared photodetectors

Wasilewski, Z. R.

doi:10.1116/1.587020

Cited by 21 publications

(15 citation statements)

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“…There is an asymmetry between positive and negative bias voltages (also seen in the current-voltage curve in Fig. 11), most likely due to the dopant segregation [14,15]. Overall the behavior is typical of standard QWIPs.…”

Section: Calibrated Responsivitymentioning

confidence: 73%

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Designs of broadband quantum-well infrared photodetectors and 8–12μm test device results

Liu¹,

Goodchild²,

Byloos³

et al. 2007

Infrared Physics & Technology

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Section: Calibrated Responsivitymentioning

confidence: 73%

“…These values meet our design goals, and are typical for GaAs-based QWIPs. The asymmetry in the observed current-voltage characteristics are most likely due to the dopant segregation during growth [14,15].…”

Section: Blip Temperaturementioning

confidence: 94%

Designs of broadband quantum-well infrared photodetectors and 8–12μm test device results

Liu¹,

Goodchild²,

Byloos³

et al. 2007

Infrared Physics & Technology

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“…6. Typical values for the segregation lengths can be found in [13] and [14]. The doping sheet concentration value remains the same during this change of the doping profile.…”

Section: Doping Segregationmentioning

confidence: 96%

“…Nevertheless the doping is segregated, resulting in an asymmetric doping profile. Such an effect is often considered to be at the origin of the asymmetry of the IV curve [13] with the bias polarity. To consider this effect, we have chosen to consider a trapezoidal doping profile with two segregation lengths.…”

Section: Doping Segregationmentioning

confidence: 99%

Quantum transport in quantum well infrared photodetectors in the tunneling regime

Lhuillier

Ribet-Mohamed

Nedelcu

et al. 2009

Infrared Physics & Technology

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“…2. Asymmetric Si-Delta doping has been employed to compensate for the Si segregation effect [7]. The growth temperature for the LED portion of the device was 6001, while the growth temperature for the buffer layer and QWIP sections was used as varying , thus the actual brightness of the hot-spots at the peak is larger by at least two orders of magnitude.…”

Section: Mbe Growth and Characterizationmentioning

confidence: 99%

On the existence of submicron diameter current shunts in morphologically perfect device layers

Wasilewski

Dupont

Weyher

et al. 2010

Journal of Crystal Growth

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On the existence of submicron diameter current shunts in morphologically perfect device layers Wasilewski, Z. R.; Dupont, E.; Weyher, J. L.; Laframboise, S.; Buchanan, M.; Liu, H. C.Contact us / Contactez nous: nparc.cisti@nrc-cnrc.gc.ca. (2002) 182]. The hot-spots, with surface densities varying from 20 to 3000 cm À 2 for the wafers studied, are LED electroluminescence singularities, which can be readily observed at temperatures below $ 100 K. Their spatial FWHM is less than 1 mm and they can have peak intensities of more than three orders of magnitude higher than the uniform background emission caused by the dark current through the QWIP device. In most cases the hot-spots were observed on mirror smooth, morphological defect-free surfaces. These electroluminescence abnormalities result from highly localized electron injection channels in the QWIP portion of the device. As there is no morphological abnormality in their locations, these defects are undetectable with established wafer screening instruments such as Nomarski and Surfscan, yet may be very common in MBE-grown heterostructures. Although correlation with dislocations is observed, the great majority of dislocations do not give rise to the hot-spots, and there are many hot-spots, which are not located in the proximity of any dislocation. We therefore, propose that the hot-spots arise from a local alloy separation in ternary layers, induced by floating organic molecules or molecular contamination clusters, resulting in nanowire-like defects. Highly localized drops in the layer resistivity caused by such defects will adversely affect the performance of any devices relying on vertical transport, particularly if the device current depends very strongly on the height of the potential barriers employed, such as in quantum well infrared photodetectors or resonant tunneling diodes. Also, for devices working at high current densities, such as certain lasers or HBTs, the presence of such defects may lead to early device failure. Crown

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Studies of Si segregation in GaAs using current–voltage characteristics of quantum well infrared photodetectors

Abstract: Articles you may be interested inCurrent-voltage analysis of a tunneling emitter-undoped single quantum well infrared photodetector

Cited by 21 publications

References 0 publications

Designs of broadband quantum-well infrared photodetectors and 8–12μm test device results

Designs of broadband quantum-well infrared photodetectors and 8–12μm test device results

Quantum transport in quantum well infrared photodetectors in the tunneling regime

On the existence of submicron diameter current shunts in morphologically perfect device layers

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