Studies of the chemical and electrical properties of fullerene and 3-aminopropyltrimethoxysilane based low-k materials

Annealing Influence on Siloxane-Based Materials Incorporated with Fullerenes, Phthalocyanines, and Silsesquioxanes

“…Furthermore, the hysteresis of sample B (clockwise character) is mostly appearing in the opposite direction compared to sample A (counterclockwise). In our previous work, we have argued that a filling and defilling of NH 3 + charge trapping centers within the APTMS-based films may occur, where the trapping centers are created by the interaction with ambient CO 2 [10][11][12]. This finding is in agreement with our XPS results which delivered strong NH 3 + contributions within the N1s core level spectra of APTMS [12].…”

“…Firstly, we shortly reflect the hysteresis inside the CV measurements which we observed in all of our investigated siloxane-based films [10][11][12]15]. Figure 2 Obviously, in agreement with our previous reports [11,12], the hysteresis of the pure APTMS film is much higher than in the CuPc/PCBM/POSS incorporated film.…”

“…More experimental details concerning satellite radiation, background removal, energy shift, atomic concentration determination, and peak decomposition are given elsewhere [10][11][12]. CV curves were recorded on MIS structures by a CV setup based on a LCR meter Agilent 4284A [13].…”

“…CV curves were recorded on MIS structures by a CV setup based on a LCR meter Agilent 4284A [13]. Further details of these measurements can also be found in [9][10][11]. The resistivity of the silicon wafers (1-5 Ω cm) and the accumulation capacitance were used to estimate the MIS flat band capacitance [14].…”

“…Recently, we have reported about our attempts to synthesize materials based on APTMS incorporated by fullerenes (C 60 , [6,6]-phenyl-C61-butyric acid methyl ester (PCBM)), or/and copper phthalocyanine (CuPc), or/and three-dimensional structure cage polyhedral oligomeric silsesquioxanes (POSS) for possible low-k application [10][11][12]. In general, we could demonstrate that the resulting permittivity of the matrix decreased by the incorporation of these molecules [10][11][12]. In detail, our results indicate that a properly chosen and relatively low filler concentration of both CuPc and POSS within the siloxane matrix leads to homogenous films with an extremely low dielectric constant in the range of 1.8 [11].…”