Studies of the near-surface layers of silicon crystals implanted with fast ions

Structure perfection variations of Si crystals grown by Czochralski or floating zone methods after implantation of oxygen or neon atoms followed by annealing

“…Three Si samples of the first series I, samples 1, 2, and 3, of (100) surface orientation and of thickness about 3,0 mm, containing rather high concentration C 0 of oxygen (up to ~ 10 18 cm -3 ) were grown by Czochralski method (CzSi). The samples 2 and 3 were irradiated with neon and oxygen ion beams of energy 4 MeV/u and dose 10 14 particles/cm 2 from the Warsaw Cyclotron [6]. The implantation was performed by uniformly defocused beam at room temperature.…”

Structure Changes in Cz-Si Single Crystals Irradiated with Fast Oxygen and Neon Ions

“…The present studies are undertaken in connection with the results of our previous paper [1], in which we reported the results of the X-ray measurements performed by means of a Philips high-resolution diffractometer using the characteristic Cu K« , radiation (a = 0.1541 nm). From the recorded rocking curves the increase in the lattice parameter of silicon implanted with 4 MeV/u neon ions by *Corresponding author, e-mail: zymier@ifpan.edu.pl (137) 1 x 10 -3 nm was determined, whereas no change was noticed for silicon irradiated with oxygen ions with the same energy and dose, and from the grazing X-ray dence reflectivity data, the increase in the surface roughness of implanted silicon crystals was detected.…”