Studies of the surface structures formed by the alternated electrodeposition of Cd and Te on the low-index planes of Au

Suggs, D. Wayne; Stickney, John L.

doi:10.1016/0039-6028(93)90720-5

Cited by 74 publications

(76 citation statements)

References 12 publications

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“…1), the second reduction peak C2 and its stripping peak A2 (at 0.48 V) appeared. Based upon the four electrons process for Te oxidization and reduction, the coverage for the reductive peaks C1 corresponds to 1/3 monolayers and agrees well with that from STM study of the first UPD Te on Au(1 1 1) by Stickney and co-workers [52][53][54] Because the second reductive peak C2 is partially obscured by bulk deposition, it is difficult to make accurate current integration about the reductive peaks. However, subsequent oxidative stripping scans suggest a total coverage of 0.68 ML after C2, suggesting that surface-limited deposition of Te occurred at C1and C2.…”

Section: Resultssupporting

confidence: 58%

Electrochemical atom-by-atom growth of highly uniform thin sheets of thermoelectric bismuth telluride via the route of ECALE

Zhu

Yang

Zhou

et al. 2008

Journal of Electroanalytical Chemistry

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Section: Resultssupporting

confidence: 58%

Electrochemical atom-by-atom growth of highly uniform thin sheets of thermoelectric bismuth telluride via the route of ECALE

Zhu

Yang

Zhou

et al. 2008

Journal of Electroanalytical Chemistry

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“…Ultrahigh vacuum-electrochemical ͑UHV-EC͒ techniques and scanning tunneling microscopy ͑STM͒ have been used to study the formation of compounds on single-crystal electrodes. 5,6,13,18,19 Other work has involved the use of thin layer electrodes ͑TLE͒ and cyclic voltammetry to study the conditions ͑potentials and solution compositions͒ needed to form a number of compounds using ECALE. 1,2,20,21 In addition, an automated flow cell deposition system is being developed to form thicker films using the ECALE method.…”

Section: Introductionmentioning

confidence: 99%

“…5,6 The structure of the deposit consisted of a c͑2ϫ2͒ unit cell, with 1/2 coverages of both Te and Cd. Reasoning by analogy to CdTe, it is anticipated that the optimum first atomic layer of Se should be 1/2 coverage.…”

Section: Introductionmentioning

confidence: 99%

Electrochemical formation of Se atomic layers on Au(100)

Lister

Huang

Herrick

et al. 1995

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Studies of the electrodeposition of atomic layers of Se have been prompted by their importance in the formation of II–VI compound semiconductors by electrochemical atomic layer epitaxy (ECALE). ECALE is a method where a compound is formed by the sequential, alternated, electrodeposition of atomic layers of the constituent elements making up a compound. It has been shown that the structure of the first atomic layer is generally the most critical. The present article describes three different methods for forming that first atomic layer. Studies of the structures resulting from those methods have revealed four distinctly different Se structures, all of which can be considered atomic layers, as none is more than a single-Se atom thick. Graphs of coverage versus potential have been obtained for each of the methods, and show distinct plateaus over as much as 0.15 V, indicating the stability of some of the structures. The sequence of structures first involves the formation of a 1/4 coverage (2×2), followed by a (2×√10) at 1/3 coverage, and then a c(2×2) at 1/2 coverage. In addition, Se8 rings were observed to form, much the same as the S8 rings previously observed for S adsorbed on Au surfaces. At coverages near 0.7, these rings begin to coalesce into a nearly complete monolayer of Se atoms, but with systematic absences, which roughly correspond to the initial holes in the Se8 rings. This structure appears to have an average unit cell which can be described as a (3×√10).

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“…An alternative approach that may be applied to determine AH^M^) is similar to the one presented above for the enthalpy of adsorption of Hup D (see equation 9) and it is based on the Gibbs-Helmholtz formula and the general adsorption isotherm presented in equation 15. Thus by experimental determination of pairs of values of Ε and Τ at which the coverage is constant, θ Μυρο = const, and by plotting E/T versus 1/T one obtains linear relations and from their slope one may evaluate AH^M^).…”

Section: Under-potential Deposition Of Semiconductors and Metalsmentioning

confidence: 99%

“…It is well recognized in electrochemical surface science that anions coadsorbed on the electrode surface with the UPD species influence their cychc-voltammetry, CV, and chronocoloumetry characteristics (30)(31)(32). Structural changes associated with M and anion coadsorption are investigated by electrochemical, radiochemical, and UHV techniques as well as by scanning tunneling microscopy, STM, and atomic force microscopy, AFM (14,15,(33)(34)(35)(36)(37)(38)(39)(40). These changes can be related to such thermodynamic state functions as the Gibbs free energy, entropy and enthalpy of adsorption (18,19,30,32).…”

mentioning

confidence: 99%

Fundamental Thermodynamic Aspects of the Underpotential Deposition of Hydrogen, Semiconductors, and Metals

Zolfaghari

Jerkiewicz

1997

ACS Symposium Series

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The paper presents theoretical methodology that allows determination of thermodynamic state functions of the under-potential deposition of hydrogen, UPD H, and semiconductor or metallic species, UPD M. The experimental approach involves temperature dependence of the UPD by application of cyclic-voltammetry or chronocoulometry. The theoretical approach is based on a general electrochemical adsorption isotherm and numerical calculations which lead to determination of the Gibbs free energy of adsorption, ΔG°a ds , as a function of Τ and θ. Temperature dependence of ΔG°a ds , (for θ = const) leads to appraisal of the entropy of adsorption, ΔS°a ds , whereas coverage dependence of ΔG°a ds (for Τ = const) allows assessment of the nature of the lateral interactions between the adsorbed species; knowledge of ΔG°a ds and ΔS°a ds leads to determination of ΔH°a ds . The paper presents new approach which permits elucidation of the bond energy between the substrate, S, and H UPD or S and M UPD , E S-HUPD and E S-MUPD , respectively. Comprehension of E S-HUPD is essential in assessment of the strength of the S-H UPD bond and the adsorption site of H UPD .Knowledge of E S-MUPD is of importance in: (i) evaluation of the strength of the cohesive forces acting between S and M UPD that are responsible for the adhesion of the adsorbate to the substrate; and (ii) comparison of the S-M UPD bond with that observed for the 3-D bulk deposit of M. The UPD H on Rh and Pt electrodes from aqueous H2SO4 solution is discussed as an example of application of this methodology.The under-potential deposition, UPD, of hydrogen, H, and semiconductors and metals, abbreviated by M, of the ρ and d blocks of the periodic table on transitionmetal has been a subject of intense studies in electrochemical surface science (1-15).

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Studies of the surface structures formed by the alternated electrodeposition of Cd and Te on the low-index planes of Au

Cited by 74 publications

References 12 publications

Electrochemical atom-by-atom growth of highly uniform thin sheets of thermoelectric bismuth telluride via the route of ECALE

Electrochemical atom-by-atom growth of highly uniform thin sheets of thermoelectric bismuth telluride via the route of ECALE

Electrochemical formation of Se atomic layers on Au(100)

Fundamental Thermodynamic Aspects of the Underpotential Deposition of Hydrogen, Semiconductors, and Metals

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