Studies of tunnel MOS diodes II. Thermal equilibrium considerations

Abstract

The oxide thickness δ of a tunnel MOS diode is varied over the range 10 to 45 Å. This is done in an effort to establish the restrictions upon δ for which thermal equilibrium in the semiconductor is a valid approximation under the application of bias. Particular attention is paid to the reverse-bias case, and most of the experimental results are for δ>25 Å. A transition is observed from the behaviour of the ideal Schottky barrier to that of the thick-film MOS device. The ac conductance and capacitance together with dc current characteristics are studied as continuous functions of bias. From these results, information is obtained which relates the quasi-Fermi levels for (i) majority carriers, (ii) minority carriers and (iii) electrons in the interface states to δ. Thermal equilibrium statistics are found to be applicable to the semiconductor in the presence of a bias voltage when δgreater, similar30 Å, which compares with a theoretical prediction of δgreater, similar13 Å.

Temperature Dependent Current-Voltage and Capacitance-Voltage Characteristics of an Au/n-Type Si Schottky Barrier Diode Modified Using a PEDOT:PSS Interlayer

“…As proposed by Card and Rhoderick,23) in interface states in equilibrium with the semiconductor, the ideality factor becomes greater than unity and the N SS is given by:…”

“…22) The N SS for the Au/PEDOT:PSS/n-Si SBD can be obtained from the forward bias I-V data by taking the voltage-dependent ideality factor nðV; T Þ with the effective barrier height È b ðV; T Þ. The parameters of nðV; T Þ and ) b (V, T) can be estimated from the following equations: 23) nðV Þ ¼ q kT…”

The Effects of MOS Layers on Sensing Properties of MOS Photosensor

“…The minimum value of depletion region capacitance can be calculated according to the following equation [16]:…”

Quantum-mechanical calculation of carrier distribution in MOS accumulation and strong inversion layers

“…If we really want to consider the tunneling current, the calculation will be complicated because the calculation of quasi-Fermi level must be included. 12 Because our main goal is establishing a statistical physics model in the quantized region of MOS structures, we set the tunneling current as zero in this study, and left the calculation of tunneling current for future works. Another simplification is needed because the condition (10c) and (10d) is still not the real shape of real potential.…”