Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes

Card, H.C.; Rhoderick, E. H.

doi:10.1088/0022-3727/4/10/319

Cited by 1,697 publications

(913 citation statements)

References 17 publications

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“…SBH(J 0 ) > SBH(C 0 ) can be due to tunneling-attenuated TE (see Table 2), with the difference due to the monolayer-induced reduction in transmission probability. [44,63,90,150] SBH(J 0 ) < SBH(C 0 ) suggests an inhomogeneous barrier. [151,152] Surprisingly, for Hg/alkyl-n-Si MOMS SBH(J 0 ) $SBH(C 0 )) [19,135] but this is simply because both the width of the space charge (C 0 ) and the semiconductor transport (J 0 ) saturate at similar values (strong inversion).…”

Section: Extraction Of the ''Semiconductor Barrier Height'' (Sbh)mentioning

confidence: 98%

Molecules on Si: Electronics with Chemistry

et al. 2009

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Basic scientific interest in using a semiconducting electrode in molecule‐based electronics arises from the rich electrostatic landscape presented by semiconductor interfaces. Technological interest rests on the promise that combining existing semiconductor (primarily Si) electronics with (mostly organic) molecules will result in a whole that is larger than the sum of its parts. Such a hybrid approach appears presently particularly relevant for sensors and photovoltaics. Semiconductors, especially Si, present an important experimental test‐bed for assessing electronic transport behavior of molecules, because they allow varying the critical interface energetics without, to a first approximation, altering the interfacial chemistry. To investigate semiconductor‐molecule electronics we need reproducible, high‐yield preparations of samples that allow reliable and reproducible data collection. Only in that way can we explore how the molecule/electrode interfaces affect or even dictate charge transport, which may then provide a basis for models with predictive power.To consider these issues and questions we will, in this Progress Report, review junctions based on direct bonding of molecules to oxide‐free Si. describe the possible charge transport mechanisms across such interfaces and evaluate in how far they can be quantified. investigate to what extent imperfections in the monolayer are important for transport across the monolayer. revisit the concept of energy levels in such hybrid systems.

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Section: Extraction Of the ''Semiconductor Barrier Height'' (Sbh)mentioning

confidence: 98%

Molecules on Si: Electronics with Chemistry

et al. 2009

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“…[15,27,28] Q sc is the total space charge in silicon (see Figure S3, Supporting Information). [15] As shown in Figure 4d, the interface state based ideality factor is less than that based on the I-V curves because the extracted ideality factor based on the only interface states does not include the other possible contributions.…”

Section: Wwwadvelectronicmatdementioning

confidence: 99%

Origin of Voltage‐Dependent High Ideality Factors in Graphene–Silicon Diodes

Park

Choi

2017

Adv Elect Materials

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devices, the hurdle should be overcome by identifying the origin. However, the origin of the wide-range ideality factor was not yet been fully elucidated.The ideality factor is a measure of how efficiently an applied bias is delivered to the junction of the device. The ideality factor of GS devices can be influenced by both voltage-independent serial resistance and voltage-dependent attributes such as interface state and quantum capacitance. Thus, one can expect that the ideality factor changes with applied bias voltage.First of all, when a bias voltage is applied to a GS junction, the Fermi level of 2D graphene changes significantly in contrast to typical metal-oxide-semiconductor (MOS) devices due to the far less density of states of graphene compared to that of 3D metal. As a result, the effective Schottky barrier height and the resistance of graphene change with bias voltage. This directly influences the GS device performance and the ideality factor.Second, a peculiar issue related to the GS devices is the un avoidable wet graphene transfer process on a cleaned silicon wafer. During this process, oxidation of silicon occurs naturally. As a result, the GS devices inevitably have a native interfacial oxide layer between graphene and silicon although it may be very thin. This interfacial oxide layer directly influences the performance of GS devices. Although the layer can act as a tunneling barrier, which may enhance the effective potential barrier height, this effect has often been ignored because the layer is thin enough to assume that the transport property is largely governed by the semiconductor rather than limited by the tunneling.Third, the truncated silicon surface has high density of surface states. The surface states can exist as interface states of GS devices. The interface states can be equilibrated with silicon itself or with the graphene and this depends on the thickness of the interfacial oxide layer. Due to the very thin native oxide layer, one can expect that the silicon interface state can be mostly equilibrated with graphene rather than silicon itself. But this has not been confirmed yet.In this study, first we extract the voltage-dependent ideality factors of graphene-silicon Schottky diodes from their I-V characteristics based on Schottky emission theory. [13][14][15] We then compare the ideality factors with those obtained from the impedance spectra. [16,17] We designed an equivalent circuit model for analysis of impedance spectra accounting for Undoubtedly graphene-silicon (GS) heterostructure devices will play significant roles as future rectifiers, potential barrier modulators, photodetectors, photovoltaic devices, biochemical sensors, and so on. However, typical GS devices suffer from unusually wide-range voltage-dependent high ideality factors (η = 1.1-33.5). To overcome this hurdle, the origin of this wide-range voltage-dependent ideality factor should first be identified but this has not yet been fully studied. This study focuses on identifying the origin using impedance spectroscop...

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“…Hence, as a result of a distribution of interface states in space and in energy, one may consider that a fraction (D SA ) is in equilibrium with the metal and a fraction (D SB ) is in equilibrium with the semiconductor. 37 Equation (2) gives …”

Section: A Band Diagram Of the Tunnel Mis Diodementioning

confidence: 99%

Temperature dependence of current density and admittance in metal-insulator-semiconductor junctions with molecular insulator

Fadjie-Djomkam

Ababou‐Girard

Hiremath

et al. 2011

Journal of Applied Physics

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Electrical transport in ultrathin Metal-insulator-semiconductor (MIS) tunnel junctions is analyzed using the temperature dependence of current density and admittance characteristics, as illustrated by Hg//C 12 H 25 -n Si junctions incorporating n-alkyl molecular layers (1.45 nm thick) covalently bonded to Si(111). The voltage partition is obtained from J(V, T) characteristics, over eight decades in current. In the low forward bias regime (0.2-0.4 V) governed by thermionic emission, the observed linear T-dependence of the effective barrier height, qU EFF ðTÞ¼qU B þðkTÞb 0 d T , provides the tunnel barrier attenuation, expðÀb 0 d T Þ, with b 0 ¼ 0.93 Å À1 and the thermionic emission barrier height, U B ¼ 0:53 eV. In the high-forward-bias regime (0.5-2.0 V), the bias dependence of the tunnel barrier transparency, approximated by a modified Simmons model for a rectangular tunnel barrier, provides the tunnel barrier height, U T ¼ 0:5 eV; the fitted prefactor value, G 0 ¼ 10 À10 X À1 , is four decades smaller than the theoretical Simmons prefactor for MIM structures. The density distribution of defects localized at the C 12 H 25 -n Si interface is deduced from admittance data (low-high frequency method) and from a simulation of the response time s R ðVÞ using Gomila's model for a non equilibrium tunnel junction. The low density of electrically active defects near mid-gap (D S < 2 Â 10 11 eV À1 .cm À2 ) indicates a good passivation of dangling bonds at the dodecyl -n Si (111) interface.

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Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes

Cited by 1,697 publications

References 17 publications

Molecules on Si: Electronics with Chemistry

Molecules on Si: Electronics with Chemistry

Origin of Voltage‐Dependent High Ideality Factors in Graphene–Silicon Diodes

Temperature dependence of current density and admittance in metal-insulator-semiconductor junctions with molecular insulator

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