Studies on e-beam deposited transparent conductive films of In₂O₃:Sn at moderate substrate temperatures

Abstract

An electron beam evaporation method is used to prepare In2O3 films with and without Sn doping. It is shown that highly transparent and conducting films can be prepared at substrate temperature as low as 200 degrees C. The characteristic feature of such films is their high carrier density and high infrared reflectivity. The lowest resistivity is found to be 2.4*10-4 Omega cm with a carrier concentration of 8*1020 cm-3 and mobility of about 30 cm2 V-1 s-1 at the doping level of 4 mol.% SnO2. These polycrystalline films show a highly preferred orientation. On the basis of Hall measurements and structural data, sources of scattering in these films are suggested.

Growth of transparent conducting nanocrystalline Al doped ZnO thin films by pulsed laser deposition

“…The resistivity, which depends on carrier concentration and Hall mobility, decreases from $3 Â 10 À2 O-cm for undoped ZnO to $6 Â 10 À4 O-cm for 2 at% Al doping. The initial increase in carrier concentration results in a decrease in the resistivity as a result of donor electrons from the Al dopant [3,18,19], and associated oxygen vacancies. However, with further increase in Al doping the resistivity starts increasing significantly.…”

Development of an “Electroptode” Immunosensor: Indium Tin Oxide-Coated Optical Fiber Tips Conjugated with an Electropolymerized Thin Film with Conjugated Cholera Toxin B Subunit

“…33 Also, transparency is unfortunately not perfect due to diffuse scattering from surface roughness and internal scattering from grain boundary effects. 33 There are several known methods to deposit thin films of ITO, including radio frequency (rf) sputtering, 34 magnetron sputtering, 35 dc field sputtering, 36 screen-printing technique, 37 electron 38 or ion 39 beam deposition, chemical vapor deposition, 40 activated reactive evaporation, 41 and spray pyrolysis. 42 We have chosen, herein, to use radio frequency sputtering.…”

“…There are several known methods to deposit thin films of ITO, including radio frequency (rf) sputtering, magnetron sputtering, dc field sputtering, screen-printing technique, electron or ion beam deposition, chemical vapor deposition, activated reactive evaporation, and spray pyrolysis . We have chosen, herein, to use radio frequency sputtering.…”

Inducing conductivity in polycrystalline ZnO1-x thin films through space charge doping

“…5(a). The remaining scattering contribution, due to ionized impurities, implies a linear dependence of l on T 3=2 at low temperature, 32 clearly observed in Fig. 5(b) at high carrier concentrations (>10 14 cm À2 ).…”