Studies on electrical and the dielectric properties in MS structures

The influence of annealing temperature and tellurium (Te) on electrical and dielectrical properties of Al/p-CIGSeTe/Mo Schottky diodes

“…11 indicates that electrical conductivity increases with the increasing annealing temperature followed by a sharp increase over z240 C. Similar tendency testified in the literature [40,50,51,54,55]. The increase of the electrical conductivity causes to an increase of the eddy current which in turn increases the energy loss tan d [19]. This situation can be attributed to a gradual increase in series resistance with increase in temperature and number of Te atoms [56].…”

“…Furthermore, the increase in temperature induced an expansion of molecules. The rate of increase, as the temperature causes a loosening of the rigid structure, results in a rise in dipole orientation and thus an increase in 3 0 , 3 00 and tan d. It can be said that this MS structure possesses better dielectric properties 3 0 , 3 00 and tan d with the Te content and annealing [19,49].…”

“…R s is one of the important sources of small signal energy loss in MS Schottky devices. This results in a critical error in extraction of interfacial properties and doping profiles from the admittance measurements [19,36]. The real series resistance of SBD can be derived from the CeV and G/weV measurements in strong accumulation region at high frequency (500 kHz).…”

“…The real part of the dielectric constant ( 3 0 ) at various frequencies is calculated using the measured capacitance values (C m ) at the strong accumulation region according to the relation [19,21,22,46,47],…”

Microfabricated ion traps

“…Values for loss tangent have been studied in the GHz range for microwave integrated circuit applications [79] and diode structures at kHz range [75,80,81]. Generally the loss tangent decreases with increasing frequency [82,83] and there has been a temperature dependence shown for specific structures [80]. Values at 1 MHz can be obtained but are dependent on the structures tested; Au/SiO 2 /n-Si tan δ ∼ 0.05 [75], Au/Si 3 N 4 /p-Si tan δ ∼ 0.025, [81], Cr/SiO 1.4 /Au tan δ ∼ 0.09 [84].…”