2023
DOI: 10.1021/acsaem.2c03984
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Studies on Femtosecond Laser Textured Broadband Anti-reflective Hierarchical a-SiNx:H Thin Films for Photovoltaic Applications

Abstract: Simple ultrafast laser writing for the fabrication of hierarchical silicon nitride (a-SiNx:H) microstructures is demonstrated as an effective antireflection coating. A wide range of Si-rich to N-rich a-SiNx:H thin films, having varied optical band gap (2.32–5.94 eV) and refractive index (2.8–1.7) of wavelength-ordered (∼λ/4) thickness, are deposited using the plasma-enhanced chemical vapor deposition technique. The high-intensity femtosecond laser (800 nm, 120 fs, 1 kHz) interaction with a-SiNx:H films resulte… Show more

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Cited by 5 publications
(5 citation statements)
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“…The TMMsimulated reflection spectra by varying the refractive index contrast of constituent layers are plotted, and it is observed The respective optical band gaps are ∼5.9 eV (band edge at ∼210 nm) and 2.64 eV (band edge ∼470 nm). 42 The cross-sectional view of fabricated ACPQ (N=2) based DBR and aperiodic microcavities are shown in Figure 2. Further, to demonstrate the fabrication capability of aperiodic structures of orders N = 1 to 5 is realized from electrochemically induced porous silicon, and details can be found in Supporting Figure S6.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…The TMMsimulated reflection spectra by varying the refractive index contrast of constituent layers are plotted, and it is observed The respective optical band gaps are ∼5.9 eV (band edge at ∼210 nm) and 2.64 eV (band edge ∼470 nm). 42 The cross-sectional view of fabricated ACPQ (N=2) based DBR and aperiodic microcavities are shown in Figure 2. Further, to demonstrate the fabrication capability of aperiodic structures of orders N = 1 to 5 is realized from electrochemically induced porous silicon, and details can be found in Supporting Figure S6.…”
Section: Resultsmentioning
confidence: 99%
“…Based on the mentioned TMM simulations, the ACPQ of cantor tri-adic ( N = 2) structure was experimentally realized from PECVD deposition from nonstoichiometric silicon nitride (a:SiN x ) multilayers with stoichiometric ratios R = [N]/[Si] ∼ 1.54 (nitrogen-rich) and 0.36 (silicon-rich) for low and high refractive index layers ( n L = 1.8 and n H = 2.7), respectively. The respective optical band gaps are ∼5.9 eV (band edge at ∼210 nm) and 2.64 eV (band edge ∼470 nm) . The cross-sectional view of fabricated ACPQ (N=2) based DBR and aperiodic microcavities are shown in Figure .…”
Section: Resultsmentioning
confidence: 99%
“…A null ellipsometry study of optical constants of the as-deposited (bottom) Si 3 N 4 film indicates that the refractive index, thickness, and stoichiometry, ([N]/[Si]) are 1.9, ca. 85–90 nm, and 1.33, respectively . Additionally, the presence of Au traces inside the fabricated structure has been established by analyzing the proportion of atomic weights of metal elements in the untreated and post-treated samples with EDX (images not provided).…”
Section: Resultsmentioning
confidence: 99%
“…85−90 nm, and 1.33, respectively. 56 Additionally, the presence of Au traces inside the fabricated structure has been established by analyzing the proportion of atomic weights of metal elements in the untreated and post-treated samples with EDX (images not provided). The UV−visible reflection spectra at wavelengths between 350 and 850 nm of annealed Au NPs stacked between Si 3 N 4 thin layers, before and after SHI irradiation at different fluences, are shown in Figure 2a.…”
Section: Resultsmentioning
confidence: 99%
“…Due to the particularity of the power system [5], electric energy will bring environmental problems while being produced [6], and the introduction of environmental factors poses new challenges to economic dispatch. Therefore [7], in the process of power system operation, it is necessary to consider both energy issues and environmental issues, and effectively ensure environmental quality while meeting economic dispatch [8]. How to improve the convergence speed and operation efficiency of the algorithm [9], and obtain better dispatching optimization results is the starting point for the innovation and improvement of the dynamic environmental economic dispatching problem of power system [10].…”
Section: Introductionmentioning
confidence: 99%