Studies on Leakage Mechanisms and Electrical Properties of Doped BiFeO[sub 3] Films

Lee, Chia-Ching; Wu, Jenn‐Ming

doi:10.1149/1.2745123

Cited by 47 publications

(33 citation statements)

References 17 publications

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“…[16][17][18][19][20][21][22] For example, Qi et al 16 confirm that the high leakage current density originates from the small amounts of Fe 2þ ions and the oxygen vacancies existing in BFO, as confirmed by Ni 2þ and Ti 4þ substitution at the Fe site. Among ion substitutions, Mn substitution for Fe greatly improves the breakdown resistance and reduces the leakage current densities in a high electric field region, and subsequent improvement in ferroelectric behavior has been demonstrated.…”

Section: Introductionmentioning

confidence: 96%

Valence-driven electrical behavior of manganese-modified bismuth ferrite thin films

Wang

Xiao

et al. 2011

Journal of Applied Physics

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Enhanced ferroelectric and piezoelectric properties in doped lead-free ( Bi 0.5 Na 0.5 ) 0.94 Ba 0.06 TiO 3 thin films Appl. Phys. Lett. 97, 212901 (2010); 10.1063/1.3518484 Effect of manganese doping on remnant polarization and leakage current in ( K 0.44 , Na 0.52 , Li 0.04 ) ( Nb 0.84 , Ta 0.10 , Sb 0.06 ) O 3 epitaxial thin films on Sr Ti O 3 BiFe 0.95 R 0.05 O 3 (Mn 2þ , Mn 3þ , and Mn 4þ ) thin films with (110) orientation were fabricated on SrRuO 3 /Pt/TiO 2 /SiO 2 /Si(100) substrates via rf sputtering. With the increasing valence of Mn in BiFe 0.95 R 0.05 O 3 , the concentration of Fe 2þ increases, whereas the concentration of oxygen vacancies decreases. The electrical properties of BiFe 0.95 R 0.05 O 3 are correlated with the valence of Mn. Their leakage current density is dependent on the concentration of oxygen vacancies caused by different valences of Mn.Their P-E loops become better with the increasing valence of Mn owing to a lower leakage current density in high electric field regions, and a large remanent polarization of 2P r $ 145.2 lC/cm 2 is obtained for the Mn 4þ -doped film. For the Mn 2þ -doped bismuth ferrite film, the space-charge-limited conduction and Schottky barrier dominate its leakage behavior under a negative electric field, the Ohmic conduction and Schottky barrier are involved in the leakage behavior under a positive electric field, and the interface-limited Fowler-Nordheim tunneling is their dominant mechanism in a high electric field region. In contrast, an Ohmic conduction dominates the leakage behavior of Mn 3þ -and Mn 4þ -doped films regardless of negative and positive directions or measurement temperatures.

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Section: Introductionmentioning

confidence: 96%

Valence-driven electrical behavior of manganese-modified bismuth ferrite thin films

Wang

Xiao

et al. 2011

Journal of Applied Physics

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“…[4][5][6][7][8][9][10][11]15 The site-engineering technique is quite important from industrial aspects because this technique can be applied to most deposition methods. However, it is not easy to reduce the leakage current of BFO films by a single ion-doping method since the excess substitution causes an increase in leakage current in the films.…”

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confidence: 99%

“…Similar tendencies have been observed in the BFO films doped with rareearth elements due to the increase in crystallization temperature. 4,7,8,11 Thus, this behavior seems to be mainly caused by a rise in crystallization temperature due to the chemical bond strength of Ti-O since the melting temperaa͒ Author to whom correspondence should be addressed. Electronic mail: kawae@ec.t.kanazawa-u.ac.jp.…”

mentioning

confidence: 99%

Improved leakage and ferroelectric properties of Mn and Ti codoped BiFeO3 thin films

Kawae¹,

Terauchi²,

Tsuda³

et al. 2009

Applied Physics Letters

235

102

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Polycrystalline BiFeO 3 ͑BFO͒, Ti-doped BFO, Mn-doped BFO, and ͑Mn, Ti͒-codoped BFO ͑BFMT͒ thin films were fabricated on Pt/ SrTiO 3 ͑100͒ substrate by pulsed laser deposition. Observed leakage current behavior in those ion-doped BFO films indicated the dominance of space-charge-limited current in the high electric field region. The leakage current of the BFMT film was much reduced in relation to the other films due to the formation of deep traps. In the BFMT film, well saturated P-E hysteresis curves were observed. Remanent polarization and coercive field for maximum electric field of 2100 kV/cm were 75 C / cm 2 and 310 kV/cm, respectively. © 2009 American Institute of Physics. ͓DOI: 10.1063/1.3098408͔ Excellent ferro-/piezoelectric properties have been reported in the BiFeO 3 ͑BFO͒ thin films comparable to those of Pb͑Zr x Ti 1−x ͒O 3 , 1-3 and thus the BFO is expected as an alternative Pb-free ferro-/piezoelectric material. However, the large leakage current of BFO thin films at room temperature ͑RT͒ is known to be a serious problem, which could limit the various applications of this material.In the past several years, site-engineering technique by substitution of small amount of impurities was proposed to solve this problem, and reduced leakage current properties were reported. [4][5][6][7][8][9][10][11]15 The site-engineering technique is quite important from industrial aspects because this technique can be applied to most deposition methods. However, it is not easy to reduce the leakage current of BFO films by a single ion-doping method since the excess substitution causes an increase in leakage current in the films. 6,7 Besides, modification of electrical properties of BFO films by ion doping at Bi site is quite difficult because of the degradations in ferroelectric properties, although rare-earth elements doped at Bi site is effective to reduce the impurity phases due to bismuth and oxygen vacancies. 5,8,9 Therefore, we propose a new combination of Mn and Ti as codoping elements for Fe site of BFO thin films. In this work, we report the synthesis and characterization of ͑Mn, Ti͒-codoped BFO ͑BFMT͒ thin films by comparing with those of pure BFO, Ti-doped BFO ͑BFT͒, and Mn-doped BFO ͑BFM͒ thin films. Moreover, it is required to reduce the leakage current of BFO films in the high electric field region ͑at least more than 400 kV/cm͒ since coercive electric fields of BFO film capacitors are generally 300-500 kV/cm. Hence, we also discuss the change in conduction mechanism in the high electric field region by ion doping in the BFO thin films.BFO, BFT, BFM, and BFMT thin films were deposited on Pt-coated ͑100͒ SrTiO 3 ͑STO͒ substrates with thicknesses ranging from 220 to 240 nm, using a conventional pulsed laser deposition ͑PLD͒ system. The ceramic targets with metal compositions of Bi 1.1 FeO 3 , Bi͑Fe 0.98 Ti 0.02 ͒O 3 , Bi 1.1 ͑Fe 0.97 Mn 0.03 ͒O 3 , and Bi͑Fe 0.95 Mn 0.03 Ti 0.02 ͒O 3 were used for deposition of BFO, BFT, BFM, and BNFM films, respectively. The details of thin film fabrication were described...

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“…10 Also, space charge limited current ͑SCLC͒ was considered in the case of doped BFO films, doping being a useful option to reduce the leakage current. 11,12 Apparently, the conduction mechanism in BFO films is bulk limited, irrespective of electrodes, doping, or crystalline quality ͑poly-crystalline or epitaxial͒. However, a recent study shows that the effect of the BFO-electrode interface on the dielectric properties of the film cannot be neglected.…”

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confidence: 99%

Orientation-dependent potential barriers in case of epitaxial Pt–BiFeO3–SrRuO3 capacitors

Pintilie

Drǎgoi

Chu

et al. 2009

Applied Physics Letters

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The leakage current in epitaxial BiFeO 3 capacitors with bottom SrRuO 3 and top Pt electrodes, grown by pulsed laser deposition on SrTiO 3 ͑100͒, SrTiO 3 ͑110͒, and SrTiO 3 ͑111͒ substrates, is investigated by current-voltage ͑I-V͒ measurements in the 100-300 K temperature range. It is found that the leakage current is interface-limited and strongly dependent on the orientation of the substrate. The potential barriers at the electrode interfaces are estimated to about 0.6, 0.77, and 0.93 eV for the ͑100͒, ͑110͒, and ͑111͒ orientations, respectively.

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Studies on Leakage Mechanisms and Electrical Properties of Doped BiFeO[sub 3] Films

Cited by 47 publications

References 17 publications

Valence-driven electrical behavior of manganese-modified bismuth ferrite thin films

Valence-driven electrical behavior of manganese-modified bismuth ferrite thin films

Improved leakage and ferroelectric properties of Mn and Ti codoped BiFeO3 thin films

Orientation-dependent potential barriers in case of epitaxial Pt–BiFeO3–SrRuO3 capacitors

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