Studies on nucleation process in diamond CVD: an overview of recent developments

Liu, Huimin; Dandy, David S.

doi:10.1016/0925-9635(96)00297-2

Cited by 243 publications

(115 citation statements)

References 134 publications

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“…A high density of diamond particles (usually 10 9 -10 12 /cm 2 ) on the substrate ensures appropriate seeding density which accelerates the onset of deposition and provides for a more uniform growth rate and thickness across the substrate. The reactor setup and seeding processes are similar to those reported in the prior art [28][29]. The major difference here is that we employ a H-rich gas system with a CH 4 /H 2 ratio as high as 10%, which is much higher than that of the previously reported polycrystalline diamond with high sp3 purity and the chamber pressure is set lower than in the literature, i.e.…”

Section: Methodsmentioning

confidence: 81%

Boron-doped ultrananocrystalline diamond synthesized with an H-rich/Ar-lean gas system

Zeng

Konicek

Moldovan

et al. 2015

Carbon

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This paper reports the recent development and applications of conductive borondoped ultrananocrystalline diamond (BD-UNCD). The authors have determined that BD-UNCD can be synthesized with an H-rich gaseous chemistry and a high CH 4 /H 2 ratio, which is opposite to previously reported methods with Ar-rich or H-rich gas compositions but utilizing very low CH 4 /H 2 ratio. The BD-UNCD has a resistivity as low as 0.01 ohm·cm, with low roughness (down to several nm) and a wide deposition temperature range (450-850¼C).The properties of this BD-UNCD were studied systematically using resistivity characterization, scanning electron microscopy, transmission electron microscopy, Raman spectroscopy, and roughness measurements. Near Edge X-ray Absorption Fine Structure (NEXAFS) spectroscopy confirms that up to 97% of the UNCD is deposited as sp3 carbon.These series of measurements also reveal additional unique properties for this material, such as an ÒMÓ shape Raman signature, line-granular nano-cluster texture and high C-H bond surface content. A hypothesis is provided to explain why this new deposition strategy, with H-rich/Ar-free gas chemistry and CH 4 /H 2 ratio, is able to produce high sp3-content and/or 2 heavily doped UNCD. In addition, a few emerging applications for BD-UNCD in the field of atomic force microscopy, electrochemistry and biosensing are reviewed here.

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Section: Methodsmentioning

confidence: 81%

Boron-doped ultrananocrystalline diamond synthesized with an H-rich/Ar-lean gas system

Zeng

Konicek

Moldovan

et al. 2015

Carbon

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“…The MD/MC cluster simulation methods are an excellent tool of materials study when equilibrium properties of phases-graphite, diamond, liquid, and amorphous-are considered [5][6][7][8][9][10][11][12][13]. These methods, however, encounter significant difficulties describing nucleation of the new phases [24] because they deal with relatively small clusters of atoms and do not allow for the analysis of heterosystems. As a result, stability of na-C can hardly be analyzed based on the cluster simulation methods.…”

Section: Carbon Phasesmentioning

confidence: 99%

Continuum theory of carbon phases

Umantsev

Akkerman

2010

Carbon

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“…[28][29][30][31][32] In addition, it has long been known that under conventional pretreatment conditions, such as manual scratching, the diamond nucleation densities on carbide-forming substrates (Si, Mo, W) are typically one or two orders of magnitude higher than those on substrates that do not form carbides (Cu, Au). 33 In this view, a number of recent studies focused on a 6 of 36 more uniform and denser nucleation of diamond during CVD. This offers the opportunity to produce very thin NCD and UNCD films reducing the surface roughness and eliminating interfacial voids.…”

Section: Of 36mentioning

confidence: 99%

Metallic Seed Nanolayers for Enhanced Nucleation of Nanocrystalline Diamond Thin Films

et al. 2013

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ABSTRACT:The enhancement of the nucleation and subsequent growth of nanocrystalline diamond (NCD) films with a submicron thickness control on silicon substrates is demonstrated by using a sputter deposition of six different metallic (Cr, Mo, Nb, Ti, V, and W) seed nanolayers. The effectiveness of altered surface morphology and surface chemistry is discussed. We show that the number density of nanodiamond particles embedded on the nanorough metallic surfaces after an ultrasonic seeding step together with the dynamic surface chemistry during hot-filament chemical vapor deposition of diamond determine the nucleation kinetics, microstructure and surface topography of the NCD films. Overall, the smoothest NCD layer (root-mean-square roughness 10 nm) was obtained with the highest seed density of diamond nanoparticles anchored to the metallic (W) surface. In particular, the rapid carbide-forming metals Mo, Nb and W showed the highest number density of diamond crystallites formed during the NCD nucleation stage, which resulted in dense, uniform and very smooth NCD films. Much rougher NCD films (17-37 nm) were obtained on the Cr, Ti, and V nanolayers that did not form carbides rapidly.Importantly, the carbon phase purity of the grown NCD films remains unaffected by the presence of different metallic seed nanolayers. Furthermore, we have assessed that the metallic nanolayer surface morphology does not play a relevant role in the enhancement of the seeding step.

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Studies on nucleation process in diamond CVD: an overview of recent developments

Cited by 243 publications

References 134 publications

Boron-doped ultrananocrystalline diamond synthesized with an H-rich/Ar-lean gas system

Boron-doped ultrananocrystalline diamond synthesized with an H-rich/Ar-lean gas system

Continuum theory of carbon phases

Metallic Seed Nanolayers for Enhanced Nucleation of Nanocrystalline Diamond Thin Films

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