2004
DOI: 10.1016/j.nima.2004.03.196
|View full text |Cite
|
Sign up to set email alerts
|

Studies on reducing leakage current and improving breakdown voltage of large-area silicon detectors: technology and results

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4

Citation Types

0
6
0

Year Published

2005
2005
2022
2022

Publication Types

Select...
5
2

Relationship

0
7

Authors

Journals

citations
Cited by 8 publications
(6 citation statements)
references
References 20 publications
0
6
0
Order By: Relevance
“…The passivation layer provides electrical stability to the sensor. Three different design techniques, such as floating guard rings (FGR), metal overhang (MO) and deep junction depth [25][26][27][28][29][30][31], are implemented to ensure sufficiently high breakdown voltage. FGR redistributes the potential around the junction over a wide area covered by the guard rings, while the MO approach distributes the electric field and minimizes the corner effects.…”
Section: Design Of Silicon Pad Arraymentioning
confidence: 99%
See 1 more Smart Citation
“…The passivation layer provides electrical stability to the sensor. Three different design techniques, such as floating guard rings (FGR), metal overhang (MO) and deep junction depth [25][26][27][28][29][30][31], are implemented to ensure sufficiently high breakdown voltage. FGR redistributes the potential around the junction over a wide area covered by the guard rings, while the MO approach distributes the electric field and minimizes the corner effects.…”
Section: Design Of Silicon Pad Arraymentioning
confidence: 99%
“…The total size of the sensor is ∼ 63 mm × 63 mm, where the actual size of each pad (P+) is 0.997 cm × 0.997 cm (optimized according to the study using Geant4 geometry simulation [24]). The shape of the individual pad is a square type with rounded corners to avoid premature edge breakdown -2 - Three different design techniques, such as floating guard rings (FGR), metal overhang (MO) and deep junction depth [25][26][27][28][29][30][31], are implemented to ensure sufficiently high breakdown voltage. FGR redistributes the potential around the junction over a wide area covered by the guard rings, while the MO approach distributes the electric field and minimizes the corner effects.…”
Section: Design Of Silicon Pad Arraymentioning
confidence: 99%
“…The passivation layer provides electrical stability to the sensor. Three different design techniques, such as floating guard rings (FGR), metal overhang (MO) and deep junction depth [25][26][27][28][29][30][31], are implemented to ensure sufficiently high breakdown voltage. FGR redistributes the potential around the junction over a wide area covered by the guard rings, while the MO approach distributes the electric field and minimizes the corner effects.…”
Section: Design Of Silicon Pad Arraymentioning
confidence: 99%
“…High breakdown voltage and low leakage current are -3 - the essential features of silicon pad detectors for HEP experiments to compensate the performance degradation due to long term operation under large particle fluence. The design of the silicon pad is carried out with multiple FGR (Floating Guard Rings) and MO (Metal Overhang) over the individual pad to reduce the electric field crowding at the junction edge near the surface and thus improving the breakdown voltage [35]. Moreover gettering techniques and double implantation steps for the backside ohmic contact have been incorporated to reduce the leakage current of the large area silicon detectors.…”
Section: Silicon Pad Arraymentioning
confidence: 99%