2010
DOI: 10.1016/j.jallcom.2009.10.264
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Studies on strain relaxation and in-plane orientation of La0.7Ca0.3MnO3 film by grazing incidence X-ray diffraction

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Cited by 10 publications
(3 citation statements)
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References 17 publications
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“…Compared to target material, thin film is easier to relax to reduce the distortion, so its structure is close to cubic structure as LaMnO 3 , whereas the distortion in bulk material cannot be eliminated, it usually distorted into hexagonal structure. The mechanism for relaxation is perhaps different from that of films grown on single crystal substrates [8].…”
Section: Resultsmentioning
confidence: 93%
“…Compared to target material, thin film is easier to relax to reduce the distortion, so its structure is close to cubic structure as LaMnO 3 , whereas the distortion in bulk material cannot be eliminated, it usually distorted into hexagonal structure. The mechanism for relaxation is perhaps different from that of films grown on single crystal substrates [8].…”
Section: Resultsmentioning
confidence: 93%
“…The AMnO 3 structure can be described with corner sharing octahedra, in which Mn is surrounded by six oxygens and A locates in cavities. Dopants can be incorporated into the AMnO 3 structure [5,6], leading to extensive variation of chemical and physical properties. Understanding the doping behavior is significative for the optimization of electronic materials [4,7,8].…”
Section: Introductionmentioning
confidence: 99%
“…For most technological applications, it is desirable to grow thin films of these materials and integrate with Si-based microelectronic devices [6]. It is well known that the magnetic and transport properties of manganite thin films are very sensitive to growth conditions, such as substrate material, substrate temperature, working pressure and the proportion of O 2 to Ar etc [7,8]. In fact, slight distortions of the microstructure can alter Mn-Mn magnetic interactions and thus lead to a change of the material transport properties.…”
Section: Introductionmentioning
confidence: 99%