2019
DOI: 10.1049/hve.2018.5095
|View full text |Cite
|
Sign up to set email alerts
|

Studies on the effects of moisture and ageing on charge de‐trapping properties of oil‐impregnated pressboard based on IRC measurement

Abstract: The dielectric properties of oil-paper insulation degrade due to moisture ingression and ageing. This degradation significantly impacts the space charge accumulation and charge trapping behaviour in the insulation, which are vital parameters for insulation health under the high-voltage direct current environment. In this work, an improved model based on the isothermal relaxation current (IRC) has been developed to study the charge trapping behaviour of an oil pressboard under the influence of moisture and agei… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

1
27
0

Year Published

2019
2019
2021
2021

Publication Types

Select...
6

Relationship

1
5

Authors

Journals

citations
Cited by 24 publications
(28 citation statements)
references
References 27 publications
1
27
0
Order By: Relevance
“…In solid dielectrics, carriers are governed by a set of self-consistent equations as following [9][10][11][12][13][14]17]. The current continuity equation:…”
Section: Bipolar Charge Transport Modelmentioning
confidence: 99%
See 1 more Smart Citation
“…In solid dielectrics, carriers are governed by a set of self-consistent equations as following [9][10][11][12][13][14]17]. The current continuity equation:…”
Section: Bipolar Charge Transport Modelmentioning
confidence: 99%
“…In solid dielectrics, carriers are governed by a set of self‐consistent equations as following [9–14, 17].…”
Section: Model Descriptionmentioning
confidence: 99%
“…From the time at which the particular amount of charge is extracted ( t n ), the trap depth ( E tn ) for that corresponding time can be calculated from the following equation:E t n = k T ln false( υ t n false) The trap density ( N t ) at the trap depth E t can be evaluated fromN t = 2 I de trap false( t false) t q l k T f 0 false( E false) Using (5) and (6), the trap density ( N t ) at trap depth E t can be calculated easily. In this present work, the values of υ and f 0 have been adopted as 6.2 × 10 12 and 0.5, respectively[21].…”
Section: Theorymentioning
confidence: 99%
“…Using (5) and (6), the trap density (σ t ) at trap depth E t can be calculated easily. In this present work, the values of υ and f 0 have been adopted as 6.2 × 10 12 and 0.5, respectively [21].…”
Section: Theory Of Charge Trapping and De-trapping And Irc Measuremenmentioning
confidence: 99%
See 1 more Smart Citation