Studies on the relaxor behavior of sol-gel derived Ba(ZrxTi1−x )O3 (0.30≤x≤0.70) thin films

Optical and dielectric relaxor behaviour of Ba(Zr0.25Ti0.75)O3ceramic explained by means of distorted clusters

“…A diffuse phase transition is commonly observed by the broadening of the dielectric constant (ε) as a function of temperature (T ). The large separation (in temperature) between the maximum real and imaginary (dielectric loss) points from the dielectric constant curve, deviation from the Curie-Weiss law near T m , frequency dispersion of both dielectric and dielectric loss in the transition region imply a frequency dependence with T m [61][62][63].…”

“…A diffuse phase transition is commonly observed by the broadening of the dielectric constant (ε) as a function of temperature (T ). The large separation (in temperature) between the maximum real and imaginary (dielectric loss) points from the dielectric constant curve, deviation from the Curie-Weiss law near T m , frequency dispersion of both dielectric and dielectric loss in the transition region imply a frequency dependence with T m [61][62][63]. Figure 6 shows the inverse dielectric constant as a function of temperature performed at different frequencies (1 kHz, 10 kHz, 100 kHz and 1 MHz) for the Ba(Zr 0.25 Ti 0.75 )O 3 ceramic prepared by SSR sintered at 1673 K for 6 h.…”

State transition and electrocaloric effect of BaZrxTi1−xO3: Simulation and experiment

“…3,4,[9][10][11][12][13][14][15][16][17][18][19][20] It is believed that the small size-difference between Ti 4+ and Zr 4+ ions induces random stain fields, which are much weaker than other relaxors with heterovalent cation substitution. 11,[19][20][21] Hence such kind of random field theory may not be appropriate to explain the relaxor behavior of BZT. The long-range Ti-O-Ti-O bonds that give rise to the dipolar correlation are broken through the substitution of Ti 4+ by non-off-center Zr 4+ .…”

Structure‐Property Phase Diagram of BaZrxTi1−xO3 System

“…Chemical substitutions at the Ba 2+ and Ti 4+ sites are made to tailor the properties to meet a variety of device and performance requirements. Among the doped BaTiO 3 systems, BaZr x Ti 1− x O 3 (BZT) solid solution has attracted considerable attention in both bulk and thin film due to its potentiality for various device applications as piezoelectric transducers, DRAM, and tunable microwave devices like tunable filters, phase shifters, antennas etc 1–17 …”

“…Although BaTiO 3 –BaZrO 3 system was identified 1 as a solid solution in the early 1950s, the most studies were focused on the temperature dependence of the dielectric constant, the nature of the phase transitions, and the ferroelectric behavior of this materials in lower concentration ( x <0.40) of Zr in BaZr x Ti 1− x O 3 system over the years. Recently, Dixit et al 2 studied the BaZr x Ti 1− x O 3 system in the composition range 0.30≤ x ≤0.70 in thin‐film samples. So far, many researchers 3–7 have studied the dielectric properties of BaZr x Ti 1− x O 3 system but in compositions with lower concentration of Zr ( x <0.40) i.e., BaTiO 3 rich side of the BZT phase diagram.…”