Studies on the self-diffusion of cadmium in cadmium telluride in the temperature range 350–650°C using anodic oxidation

Jones, E. D.; Stewart, N.M.; Mullin, J. B.

doi:10.1016/0022-0248(93)90829-l

Cited by 15 publications

(8 citation statements)

References 11 publications

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“…A similar interpretation was made by Zaitov et al in the self-diffusion of Hg in HgTe [6], whereas a trapping mechanism was proposed by Martin and Bontemps for Zn self-diffusion tails in ZnTe [7]. Jones et al [8] suggested that the tails observed in their Cd self-diffusion profiles in CdTe arose from non-equilibrium volume diffusion processes. An alternative explanation for these tails is that they arise from short-circuit paths such as subgrain boundaries and/or dislocations.…”

Section: Introductionsupporting

confidence: 67%

“…As mentioned in the introduction other explanations have been offered to account for the origin of the exponential tails. Non-equilibrium volume diffusion was proposed as the cause of the tails seen in the self-diffusion of Zn in ZnTe [7] and of Cd in CdTe [8]. In other words the tail region is where changes in non-stoichiometry are taking place, i.e.…”

Section: Discussionmentioning

confidence: 99%

“…Experimentally we generally find L D < L so r < 1 and therefore we take the positive square root in equation (8).…”

Section: Development Of a Profile With Timementioning

confidence: 99%

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Evidence of Harrison's type A and B diffusion regimes in II - VI semiconductors

Shaw

1997

Semicond. Sci. Technol.

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The development with time of a diffusion profile exhibiting components due to volume and dislocation diffusion (Harrison's type B regime) is analysed in terms of the theory of LeClaire and Rabinovitch. The results of the analysis are applied to published diffusion profiles for As in Hg 0.8 Cd 0.2 Te, Zn in ZnTe and Cd and Se in CdTe and are shown to provide a consistent interpretation of the experimental data. Various alternative interpretations are shown to be inadequate. Evidence of Harrison's type A regime is also found in data for Hg diffusion in CdTe. At large volume diffusion lengths the possibility of involvement of diffusion via (sub)grain boundaries rather than isolated dislocations cannot be excluded.

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Section: Introductionsupporting

confidence: 67%

Section: Discussionmentioning

confidence: 99%

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Evidence of Harrison's type A and B diffusion regimes in II - VI semiconductors

Shaw

1997

Semicond. Sci. Technol.

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“…However, Cd out-diffusion mechanism in Cd-rich CZT follows diffusion via Cd interstitials. Diffusion coefficients of Cd via Cd vacancies at 700 and 540 are 5.2 × 10 -6 cm 2 /s and 8.3 × 10 -7 cm 2 /s, respectively [8].…”

Section: IImentioning

confidence: 96%

Two-Step Annealing to Remove Te Secondary-Phase Defects in CdZnTe While Preserving the High Electrical Resistivity

Kım

Hwang

et al. 2018

IEEE Trans. Nucl. Sci.

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The presence of Te secondary-phase defects (i.e., Te inclusions and Te precipitates) is a major factor limiting the performance of CdZnTe (CZT) X-and gammaray radiation detectors. We find that Te secondary-phase defects in CZT crystals can be removed through post-growth, two-step annealing without creating new trapping centers (i.e., prismatic punching defects). Two-step annealing (with the first in a Cd pressure and the second one in a Te pressure) was demonstrated to be effective in removing the Te secondary-phase defects, while preserving the electrical resistivity of the CZT detector.The first step involves annealing of semi-insulating CZT under a Cd overpressure at 700/600 (CZT/Cd) for 24 hours, which completely eliminated the Te-rich secondaryphase defects (Te inclusions). However, it resulted in a lower resistivity of the samples (down to 2 × 10 4-6 Ω•cm). A subsequent annealing step involves processing CZT under a Te ambient condition at 540/380 (CZT/Te) for 120 hours, which restored the crystal's resistivity to 6.4 × 10 10 Ω•cm without creating new Te secondary-phase defects. However, Te inclusions reappeared in the case of unnecessarily long Te ambient annealing. Pulse height spectra taken with the two-step annealed CZT detectors showed improved detector performance due to a reduced concentration and size of Te secondary-phase defects. Index Terms-CdZnTe, two-step annealing, high resistivity, real-time monitoring, pulse height spectra I.

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“…Cd doping profiles in InSb, grown by the vertical Bridgman technique, are reported in ref [19] . Reports for self-diffusion of Cd in CdTe (in temperature range of 350–650 °C) can be found in ref [20] . In their study, diffusion profiles are extracted using anodic oxidation sectioning technique.…”

Section: Introductionmentioning

confidence: 99%

Study of closed-tube Cd diffusion in InSb for mid-IR detector-based applications

Pourali

2018

Heliyon

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Diffusion process of Cadmium (Cd) in indium antimonide (InSb), in a closed tube system, was studied using Hall measurement technique. Various experiments are carried out to achieve a suitable and sustainable procedure. Process details are reported and discussed in the context. Impurity concentration profiles are modeled using an optimized interstitial-substitutional approach. These Mathematical models are in good agreement with experimental data and can be employed in numerical simulations of InSb-based devices.

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Studies on the self-diffusion of cadmium in cadmium telluride in the temperature range 350–650°C using anodic oxidation

Cited by 15 publications

References 11 publications

Evidence of Harrison's type A and B diffusion regimes in II - VI semiconductors

Evidence of Harrison's type A and B diffusion regimes in II - VI semiconductors

Two-Step Annealing to Remove Te Secondary-Phase Defects in CdZnTe While Preserving the High Electrical Resistivity

Study of closed-tube Cd diffusion in InSb for mid-IR detector-based applications

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