Studies on the structural properties of SiO:H films prepared from (SiH4+CO2+He) plasma in RF-PECVD

Samanta, A. K.; Das, Debajyoti

doi:10.1016/j.solmat.2008.12.005

Cited by 42 publications

(23 citation statements)

References 46 publications

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“…Cooling of SiO is accompanied by its disproportionation to Si and SiO 2 . [18][19][20] An example of a typical fabrication method via a thermal route is heating a mixture of Si and SiO 2 at 1400 C to obtain gaseous SiO and subsequently condensing at 600 C. 20 The kinetic process of the disproportionation is dominated by many parameters among others the rate of quenching, including the distance from the heat source and the substrate or the collecting vessel, and hence, difficult to bring under precision control.…”

Section: Introductionmentioning

confidence: 99%

Solid-state reduction of silica nanoparticles via oxygen abstraction from SiO₄ units by polyolefins under mechanical stressing

et al. 2018

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Section: Introductionmentioning

confidence: 99%

Solid-state reduction of silica nanoparticles via oxygen abstraction from SiO₄ units by polyolefins under mechanical stressing

et al. 2018

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“…When using CO 2 as oxygen source there is no carbon incorporation in the layers because the CO 2 is dissociated into oxygen and carbon monoxide which is a very inert gas and pumped away. An incorporation of carbon from CO 2 has also not been reported by other groups .…”

Section: Methodsmentioning

confidence: 59%

Characterisation of intrinsic silicon oxide absorber layers for use in silicon thin film solar cells

Holinski

Borchert

Hohage

et al. 2015

Phys. Status Solidi A

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The use of a wide bandgap absorber layer in the top cell of a multi-junction silicon thin film solar cell is necessary to achieve a high-conversion efficiency. A higher bandgap of the absorber results in a higher open-circuit voltage (Voc) of the cell. In this work, intrinsic hydrogenated amorphous silicon oxide (i)a-SiO:H films have been prepared by using 13.56 MHz radio frequency plasma enhanced chemical vapour deposition (RF-PECVD) at a substrate temperature of 195 °C. The carbon dioxide (CO2) to silane (SiH4) ratio rc was varied and the influence of the ratio rc on the optoelectronic film properties was investigated. These thin films have been studied in detail in terms of their dark (σd) and photo (σph) conductivity and photoresponse PR (σph/σd). The defect density Nd and Urbach energy EU were determined by constant photocurrent method (CPM). The optical bandgap Eg,Tauc was derived from Tauc plots. Optical constants were determined by spectroscopic ellipsometry measurements in the range between 300 and 1000 nm. It was found that the increase in the CO2 to SiH4 ratio rc not only leads to a higher optical bandgap, but also higher defect density Nd and Urbach energy EU and on the other hand to a lower photoresponse PR. A suitable photoresponse PR = 8.64 × 105 at a high bandgap of Eg,Tauc = 1.91 eV and a defect density of Nd = 1.7 × 1016 cm−3 was achieved. The refraction index and extinction coefficient were lowered with increasing rc. The analysis of light-induced degradation in the (i)a-SiO:H layers showed a smaller increase of deep defects Nd and a higher increase of the Urbach energy EU in terms of the light soaking time with respect to the (i)a-Si:H reference layer

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“…The high‐intensity band around 1020 cm −1 corresponds to the stretching mode of the Si–O–Si configuration in which Si atoms are backbonded to other oxygen atoms . This band shows no dependence on the ASL thickness.…”

Section: Resultsmentioning

confidence: 99%

Investigation of the transition phases from amorphous silicon‐based multilayers to silicon nanostructures by in situ X‐ray diffraction

Agbo

Calta

Šutta

et al. 2014

Physica Status Solidi (a)

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We report the investigation of the formation phases of silicon nanostructures obtained from thermal annealing of hydrogenated amorphous silicon (a-Si:H)-based multilayers using in situ X-ray diffractometry, XRD. The multilayers composed of alternating layers of a-Si:H and silicon oxide were deposited on [100]-oriented crystalline silicon substrates using a plasmaenhanced chemical vapor deposition. Our results indicate that crystallization only starts after hydrogen effusion at a 500 8C annealing temperature, independent of the a-Si:H sublayer thickness. Hydrogen effusion results in the reordering of the silicon structure from the tetragonal to the diamond structure, while the films maintain their amorphous medium-range order.The onset of crystallization and phase separation occur at different annealing temperatures depending on the a-Si:H sublayer thickness. The fraction of the crystallized nanostructure are found to also depend on the a-Si:H sublayer thickness. Phase separation and formation of silicon nanostructures is observed by the shift of the SiO stretching vibration to higher wave numbers in the Fourier transform infrared (FTIR) absorption spectra. The different crystallization phases as observed with in situ XRD will be corroborated by measurements from Raman and FTIR spectroscopies. The crystallite size obtained from XRD compares well with that obtained from transmission electron microscopy.

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Studies on the structural properties of SiO:H films prepared from (SiH4+CO2+He) plasma in RF-PECVD

Cited by 42 publications

References 46 publications

Solid-state reduction of silica nanoparticles via oxygen abstraction from SiO₄ units by polyolefins under mechanical stressing

Solid-state reduction of silica nanoparticles via oxygen abstraction from SiO₄ units by polyolefins under mechanical stressing

Characterisation of intrinsic silicon oxide absorber layers for use in silicon thin film solar cells

Investigation of the transition phases from amorphous silicon‐based multilayers to silicon nanostructures by in situ X‐ray diffraction

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Studies on the structural properties of SiO:H films prepared from (SiH4+CO2+He) plasma in RF-PECVD

Cited by 42 publications

References 46 publications

Solid-state reduction of silica nanoparticles via oxygen abstraction from SiO4 units by polyolefins under mechanical stressing

Solid-state reduction of silica nanoparticles via oxygen abstraction from SiO4 units by polyolefins under mechanical stressing

Characterisation of intrinsic silicon oxide absorber layers for use in silicon thin film solar cells

Investigation of the transition phases from amorphous silicon‐based multilayers to silicon nanostructures by in situ X‐ray diffraction

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Solid-state reduction of silica nanoparticles via oxygen abstraction from SiO₄ units by polyolefins under mechanical stressing

Solid-state reduction of silica nanoparticles via oxygen abstraction from SiO₄ units by polyolefins under mechanical stressing