1992
DOI: 10.1016/0169-4332(92)90352-x
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Studies on the structure of the SiOx/SiO2 interface

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Cited by 38 publications
(17 citation statements)
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“…5c). This phenomenon also appeared on other materials under laser exposure [19], [21][22][23][24], [27][28].…”
Section: Effect Of Helical Line Widthmentioning
confidence: 84%
“…5c). This phenomenon also appeared on other materials under laser exposure [19], [21][22][23][24], [27][28].…”
Section: Effect Of Helical Line Widthmentioning
confidence: 84%
“…8. The major peak in this "gure is attributed to oxygen atoms from SiO (26,29). The absence of the O1s from IM might be due to the eventual coating of the IM surface by ultra"ne SiO particles.…”
Section: Charge Transfer At the Im/sio 2 Interfacementioning
confidence: 93%
“…The binding energy of the second component peak (B) is 102.00 eV, shifted by approximately 1.38 eV to a low binding energy side. This second component peak (B) may indicate the presence of covalent Si-O-C bonds between silica and polymer[10,13]. The relative peak intensity of the first component peak to the second component peak for the hybrids, PMHS-1a and PMHS-2a, is different.…”
mentioning
confidence: 91%
“…The photoelectron spectrum provides much information on electron binding energy, shift in binding energy (chemical shift), and concentration on electrons. XPS is thus extensively applied to research in solid-state physics and to solve the problems related to interaction [12][13][14][15].…”
Section: Introductionmentioning
confidence: 99%