2021
DOI: 10.1007/978-981-16-3767-4_44
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Study and Analysis of Retention Time and Refresh Frequency in 1T1C DRAM at Nanometer Regime

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“…The performance of a 1T1C DRAM cell is affected due to various leakage sources in the MOS transistor [7]. Leakage is a crucial issue in DRAM, which will bring about the probability of data loss from storage capacitor increase and deteriorate the retention time [15]. Furthermore, optimizing the circuit of the sense amplifier (SA) is an efficient and convenient method to reduce the overall energy consumption of DRAM during some particular operations [16,17].…”
Section: Introductionmentioning
confidence: 99%
“…The performance of a 1T1C DRAM cell is affected due to various leakage sources in the MOS transistor [7]. Leakage is a crucial issue in DRAM, which will bring about the probability of data loss from storage capacitor increase and deteriorate the retention time [15]. Furthermore, optimizing the circuit of the sense amplifier (SA) is an efficient and convenient method to reduce the overall energy consumption of DRAM during some particular operations [16,17].…”
Section: Introductionmentioning
confidence: 99%