Study and applications of plasma-modified Si and porous Si surfaces

Gabouze, N.; Benzekkour, N.; Mahmoudi, B.; Belhousse, S.; Cheraga, H.; Ghellai, N.

doi:10.1016/j.apsusc.2007.10.074

Cited by 6 publications

(3 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…8, shows that, for different temperatures the introduction of CO 2 gas at 500 ppm pressure induce a change in the capacitance-voltage values [23]. One can observe that the sensor behaves as a metal insulator semiconductor (MIS) structure as observed by several authors [9,11]. For the Al/CH x /PS/p-Si/Al structure biased negatively, the capacitance decreases with bias voltage reaches a maximum at about -1volt then stabilizes.…”

Section: Capacitance Measurementsmentioning

confidence: 62%

“…Some definitions are established from previous studies. First, the rectifying behavior increases with the porosity while the sensitivity decreases [9]. Second, the sensitivity of a structure to different vapors is usually evaluated by the ratio ∆I / I 0= (I gas -I 0 )/ I 0, where I gas and I 0 are the current intensity in the presence and absence of gas, respectively [10].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Temperature measurement using a Chx/porous silicon/Si structure encapsulated in a CO2 rich environment

Chiali¹,

Ghellai²,

Gabouze³

et al. 2010

Advances in Materials Sciences

Self Cite

View full text Add to dashboard Cite

This work reports on the possible use of microporous silicon as a temperature sensor. This work is based on previous published works [7, 8, and 9]. The device is based on hydrocarbon group (CH x ) / porous silicon (PS) /Si structure. The porous sample was coated with hydrocarbons groups deposited by the plasma of methane /argon mixture. Current-voltage characteristics have been investigated as a function of temperature in the range 20 0 C-70°C.The results show that for a constant voltage in the range 0.7-1V, the current increases linearly with the environment temperature reaches a maximum at 70°C and then stabilizes. This result suggests that the developed structure can be used for sensing temperatures not exceeding 70°C.

show abstract

Section: Capacitance Measurementsmentioning

confidence: 62%

Section: Introductionmentioning

confidence: 99%

Temperature measurement using a Chx/porous silicon/Si structure encapsulated in a CO2 rich environment

Chiali¹,

Ghellai²,

Gabouze³

et al. 2010

Advances in Materials Sciences

Self Cite

View full text Add to dashboard Cite

show abstract

“…This termination offers good electronic properties but suffers from instability [34]. In fact, silicon-hydrogen bonds are unstable when exposed to ambient air and slowly oxidize to form a monolayer of oxide, which many attempts have been made in order to find a better method for PL stabilization [35]. Fig.…”

Section: Pl Characteristics Of the Psi Modified By Zinc Oxidementioning

confidence: 99%

Porous Silicon Modification with ZnO Films Electro-Deposited from Zinc Nitrate Aqueous Solution by Pulsed Current of Rectangular Wave

Chen

Liu

Ban

et al. 2011

AMR

View full text Add to dashboard Cite

The pulsed current of rectangular wave was used to electrolyzing zinc nitrate aqueous solution for the purpose of preparation of a transparent zinc oxide (ZnO) film by cathodic deposition. The current density of rectangular wave was 0.2 and 1.0 mA/cm2, respectively. The former plays a role to deposit homogenous ZnO particles on the substrate surface and the latter plays the role to promote further growth of the particles and film formation. The structural and optical characterizations of the deposited films were performed with x-ray diffraction, scanning electron microscope, and measurements of optical absorption in UV-vis range. Similar technique has been used to modify as prepared porous silicon, resulting a green photoluminescence after 1 h annealing at 1273 K under oxygen atomsphere.

show abstract

Reflectance modeling of electrochemically P-type porosified silicon by Drude–Lorentz model

Kadi¹,

Media²,

Gueddaoui³

et al. 2014

Applied Surface Science

View full text Add to dashboard Cite

Study and applications of plasma-modified Si and porous Si surfaces

Cited by 6 publications

References 10 publications

Temperature measurement using a Chx/porous silicon/Si structure encapsulated in a CO2 rich environment

Temperature measurement using a Chx/porous silicon/Si structure encapsulated in a CO2 rich environment

Porous Silicon Modification with ZnO Films Electro-Deposited from Zinc Nitrate Aqueous Solution by Pulsed Current of Rectangular Wave

Reflectance modeling of electrochemically P-type porosified silicon by Drude–Lorentz model

Contact Info

Product

Resources

About