Study and characterization of a new MOSFET voltage controlled negative resistance for super selective IC tank circuits

Ramadan, Ashraf; El-Hennawy, A.; Hassan, K.; El-Nour, Ali Abou

doi:10.1080/002072199133454

Cited by 3 publications

(6 citation statements)

References 5 publications

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“…We may finally conclude that the paper present a general approach to the design of an effective class of metamaterials. We hope that the model of this paper clearly demonstrate the power of the metamaterial concept that allows a great flexibility in the design and applications of nanotechnology and GSM/UMTS applications [16][17][18][19][20].…”

Section: Resultsmentioning

confidence: 99%

“…Controlling the geometrical ratio of the NR MOSFET controls this resistance. To realize a nanogeometric NR-MOSFET, advanced fabrication process based on ion implantation will be used [18,19]. We can see that as the negative resistance may be controlled by the frequency and the contraction of the channel width until we reach to the low loss of the metamaterials cell.…”

Section: Nr-mosfet Theory and Modelingmentioning

confidence: 99%

“…Referring to Figure 6. which shows the energy band diagram of the proposed negative resistance NR-MOSFET [19].…”

Section: Nr-mosfet Theory and Modelingmentioning

confidence: 99%

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Simulation and Realization of an Active Metamaterial Cell for GSM/Umts

Alazab¹

2008

PIER M

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Abstract-Simulation and realization of an active metamateial cell are presented. This metamaterial cell has a power loss due to resistance in the coils. This paper presents a new nanometer negative resistance MOSFET (NR-MOSFET), which is used as a controllable negative resistance to compensate for the nanometer metamaterial losses. The negative resistance was about −320 Ω. A form of a lumped circuit model with active and passive resonance is presented. A negative real part of the refractive index exists in a band width from 1.11 GHz to 1.22 GHz. This model can be used as a core cell for mobile communication smart antenna.

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Section: Resultsmentioning

confidence: 99%

Section: Nr-mosfet Theory and Modelingmentioning

confidence: 99%

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Simulation and Realization of an Active Metamaterial Cell for GSM/Umts

Alazab¹

2008

PIER M

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“…The variation of the channel width W and its dependence on the drain and gate voltages in saturation region. Referring to figure ( 8 ) which shows the energy band diagram of the proposed negative resistance NR-MOSFET [10][11][12]. The variation of the potential with distance, when the Al Langue potential is made zero is given by: The amount of channel contraction can be calculated by equating the channel voltage to the surface potential, one can find:…”

Section: A Evaluation Of the Channel Contraction Due To Drain Anmentioning

confidence: 99%

“…Controlling the geometrical ratio of the NR controls this resistance. To realize a nano geometric NR-MOSFET advanced fabrication process based on ion implantation will be used instead of the traditionally known photolithographic technique to implement all drain, source and gate regions [9][10].…”

Section: B Negative Resistance Mosfetmentioning

confidence: 99%

A Modeling of Negative Resistance Mosfet for Metamaterials Low Loss Oscillators for Nanotechnology Applications

Alazab

2007

International Conference on Aerospace Sciences and Aviation Tec

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This paper presents analysis of the Metamaterials parameters and its dependence on its nanostructure and have linear electric permittivity and magnetic permeability. These parameters affect functionally the energy propagation and losses. It also investigates that these materials need to employ a controllable negative resistance to control the above mentioned parameters and compensate for the nanometric oscillator losses. A new nonnumeric negative resistance MOSFET (NR-MOSFET) has been proposed, designed and examined for this reason. These losses results from metallic sub wavelength Split-Ring Resonator (SRR) and the metamaterial itself is constructed of arrays of these SRR cells. The basic idea of the negative resistance MOSFET depends on contracting the channel width proportionally as increasing the drain voltage. The new device is expected to have a speed of response which is higher than any of the known traditional techniques, a very low power consumption and a wide dynamic range of resistance variation. This good performance serve to have the desired functionality of the metamaterial.

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Simulation and performance of a microwave magnetic sensor

Abou‐Elnour

Ibrahim

Mohamed³

Proceedings of the Nineteenth National Radio Science Conference

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Study and characterization of a new MOSFET voltage controlled negative resistance for super selective IC tank circuits

Cited by 3 publications

References 5 publications

Simulation and Realization of an Active Metamaterial Cell for GSM/Umts

Simulation and Realization of an Active Metamaterial Cell for GSM/Umts

A Modeling of Negative Resistance Mosfet for Metamaterials Low Loss Oscillators for Nanotechnology Applications

Simulation and performance of a microwave magnetic sensor

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