Study and design of graphene field effect transistor for RF performance

Thingujam, Terirama; Chettri, Dhanu; Singh, Khomdram Jolson; Kumar, Manoj; Singh, Thokchom Jayenta; Sarkar, Subir Kumar

doi:10.1109/icicct.2017.7975209

Cited by 2 publications

(4 citation statements)

References 14 publications

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“…Besides, we tested the carrier concentrations that within an order of magnitude resulted in no conspicuous difference. Similar to graphene-based FETs [6] , undoped phosphorene in our PFET has a thickness of 0.5 nm, close to the BP lattice constant in z-direction 5.3 Å [14] . Our device structure of the whole PFET is presented in Figure 4, where the gate, source and drain electrodes are Cu, and the gate length is 1.0 microns.…”

Section: Simulation Of Monolayer Phosphorene-based Fet (Pfet)mentioning

confidence: 58%

“…The source-drain current to source-drain voltage (I ds -V ds ) characteristic curve for strain engineered PFET is displayed in Figure 5. Unlike graphene-based FET which exhibits ambipolar behaviour [6,17,36] , the PFET demonstrates a strong contrast in that the hole mobility is significantly higher than the electron mobility. At low V ds (around 40mV), the I ds -V ds behaves linearly, while I ds increases significantly when V ds is high (above 25V).…”

Section: Simulation Of Monolayer Phosphorene-based Fet (Pfet)mentioning

confidence: 99%

“…Graphene itself was reported with an ultrahigh carrier mobility of 1.0 ~ 4.0 cm 2 V -1 s -1 [3] , compared to that of traditional semiconductor silicon ( cm 2 V -1 s -1 ) [4] . As such, graphene has been applied in radio frequency (RF) field-effect transistors (FETs) [5,6] to achieve faster-switching speed with terahertz (THz) frequency. However, its semi-metallic Dirac-cone band structure restricts the wide application in FETs because of the low ON/OFF current ratio [7] .…”

Section: Introductionmentioning

confidence: 99%

“…show suitable ON/OFF ratios but their carrier mobility values are quite low, i.e ~ 100 cm 2 V -1 s -1 [9] . Recently, α-phosphorene [10] , the 2D format of the black phosphorus (BP), with a thickness dependent direct bandgap of 0.3-1.5 eV [11,12] , has been reported with a high hole mobility of cm 2 V -1 s -1 [11] , making the high hole mobility phosphorene-based FETs (PFETs) [13] the next potential candidate to reach terahertz cut-off frequency [6,8,9,[14][15][16][17][18] The strain has been widely used in semiconductors engineering to achieve remarkable properties [19,20,21,[22][23][24] . 2D materials have been demonstrated with outstanding mechanical flexibility so as to withstand larger tensile strains compared to their bulk counterparts [20] .…”

Section: Introductionmentioning

confidence: 99%

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Strain‐Engineered Ultrahigh Mobility in Phosphorene for Terahertz Transistors

Fang

Cui

Khan

et al. 2019

Adv Elect Materials

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Carrier mobility is a key parameter for the operation of electronic devices as it determines the ON state current and switching speed/frequency response of transistors. Two-dimensional phosphorene has been considered as a potential candidate for field-effect transistors due to its This article is protected by copyright. All rights reserved.high mobility. Here we propose to further enhance the carrier mobility of phosphorene and device performance via strain engineering. A systematic ab-initio investigation on the anisotropic electronic structure of few-layer phosphorene reveals that the monolayer under 7.5~10% strain along zigzag direction shows an exceptional carrier mobility of ~10 6 cm 2 V -1 s -1 , which is 10 times higher than the strain-free case. The simulated device performance shows that strain-engineered phosphorene-based field-effect transistors demonstrate a cut-off frequency of ~1.14 THz with a gate length of 1.0 micron and 112 THz with a sub-10 nm gate length.

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Section: Simulation Of Monolayer Phosphorene-based Fet (Pfet)mentioning

confidence: 58%

Section: Simulation Of Monolayer Phosphorene-based Fet (Pfet)mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Strain‐Engineered Ultrahigh Mobility in Phosphorene for Terahertz Transistors

Fang

Cui

Khan

et al. 2019

Adv Elect Materials

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Investigation on Metal–Oxide Graphene Field-Effect Transistors With Clamped Geometries

Giambra

Benz

et al. 2019

IEEE J. Electron Devices Soc.

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In this work, we report on the design, fabrication and characterization of Metal-Oxide Graphene Field-effect Transistors (MOGFETs) exploiting novel clamped gate geometries aimed at enhancing the device transconductance. The fabricated devices employ clamped metal contacts also for source and drain, as well as an optimized graphene meandered pattern for source contacting, in order to reduce parasitic resistance. Our experimental results demonstrate that MOGFETs with the proposed structure show improved high frequency performance, in terms of maximum available gain and transition frequency values, as a consequence of the higher equivalent transconductance obtained.INDEX TERMS Graphene, metal-oxide graphene field-effect transistors (MOGFETs), microwave transistors, clamped geometries, meandered graphene contacts.

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Study and design of graphene field effect transistor for RF performance

Cited by 2 publications

References 14 publications

Strain‐Engineered Ultrahigh Mobility in Phosphorene for Terahertz Transistors

Strain‐Engineered Ultrahigh Mobility in Phosphorene for Terahertz Transistors

Investigation on Metal–Oxide Graphene Field-Effect Transistors With Clamped Geometries

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