Study and design of resistive switching behaviors in PMMA-based conducting-bridge random-access memory (CBRAM) devices

Nafion-Based Fully Passive Solid-State Conductive Bridging RF Switch

“…One of the prime concerns regarding the switch is its switching-reliability: at this stage we could operate it at least for 50 cycles, despite of the fabrication tolerances, and the step discontinuity due to the thickness of the copper trace. But, we were able to achieve switching as stable as 2000 cycles with a comparable MIM cell [8]. This adds to the confidence that the number of switching cycles could be improved by careful modeling of the device.…”

“…1 is the fundamental switching element of the CBRAM switching technology. The Insulator layer is a solid electrolyte, like common synthetic resin [7], [8] and one of the electrodes is an electrochemically active metal like copper or silver and the other is a relatively inert metal like aluminum or gold.…”

Investigation of integrated solid state nano‐ionic metal–insulator–metal switches for electronically reconfigurable band‐stop filter applications

“…In black and white, non-volatility gives a special contrast to this switching technology in comparison to classic RF switches like MEMS or semiconductor solutions like PIN and Varactors. The possible list of ion-conductors for MIM applications include materials like chalcogenide glass [7], Hafnium dioxide [8], mouldable polymers like PMMA [9], Nafion [10] and even an air gap with precisely controlled electrode spacing [6]. Recent literature on MIM switches using in house fabrication techniques, reports >2000 cycles of operation [9], which is quite an acceptable number at the budding stage of a technology.…”

“…The possible list of ion-conductors for MIM applications include materials like chalcogenide glass [7], Hafnium dioxide [8], mouldable polymers like PMMA [9], Nafion [10] and even an air gap with precisely controlled electrode spacing [6]. Recent literature on MIM switches using in house fabrication techniques, reports >2000 cycles of operation [9], which is quite an acceptable number at the budding stage of a technology. CBRAM or MIM switch is identified to have more versatility of application, and lesser complexities in terms of ease of fabrication in comparison to other members of the PMC family like the phase change memory (PCM) [11,12] devices.…”

Fully passive conductive-bridging solid state RF switch

“…The CBRAM RF switch is based on a Metal-Insulator-Metal structure as shown in Fig. 1 where the Insulator layer is a solid electrolyte like common synthetic resin [6,7]and one of the electrode is an electrochemically active metal like copper or silver and the other is a relatively inert metal like aluminum or gold. The switching action is obtained by applying electric field of sufficient voltage to establish a metallic link between the two electrodes through the electrolyte, and by dissolving this link using an electric field of opposite polarity, to establish the SET and RESET states respectively, as shown in the Fig.…”