Study and modelling hybrid MTJ/Ring memory using SIMON Simulator

Boubaker, Aïmen; Krout, I.; Sghaier, N.; Kalboussi, Adel

doi:10.1109/ssd.2011.5767411

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Single-electron Memories1

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2014

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“…During the last few years the development of new memory devices has attracted much attention These singleelectron memories provides a great potential for SETs to be used in the design of nonvolatile Random Access Memory (RAMs), for example, for mobile computer and communication applications [9].…”

Section: Single-electron Memoriesmentioning

confidence: 99%

Neural Network Based on SET Inverter Structures: Neuro-Inspired Memory

Hafsi

Elmissaoui²,

Kalboussi³

2014

WJNSE

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This paper presents a basic block for building large-scale single-electron neural networks. This macro block is completely composed of SET inverter circuits. We present and discuss the basic parts of this device. The full design and simulation results were done using MATLAB and SIMON, which are a single-electron tunnel device and circuit simulator based on a Monte Carlo method. Special measures had to be taken in order to simulate this circuit correctly in SIMON and compare results with those of SPICE simulation done before. Moreover, we study part of the network as a memory cell with the idea of combining the extremely low-power properties of the SET and the compact design.

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Section: Single-electron Memoriesmentioning

confidence: 99%