2007
DOI: 10.1016/j.nima.2006.12.024
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Study etching characteristics of a track detector CR-39 with ultraviolet laser irradiation

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Cited by 11 publications
(2 citation statements)
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“…Due to this absorption, there must be decomposition of molecules which may end up with chain scission in the material. Because of chain scission, material has become softened [11,12] and band gap of the material has shifted towards semiconductor range at high power density of laser. This band-gap shift towards semiconductor range is also obvious from Table I, Table II, Fig.…”
Section: Methodsmentioning
confidence: 99%
“…Due to this absorption, there must be decomposition of molecules which may end up with chain scission in the material. Because of chain scission, material has become softened [11,12] and band gap of the material has shifted towards semiconductor range at high power density of laser. This band-gap shift towards semiconductor range is also obvious from Table I, Table II, Fig.…”
Section: Methodsmentioning
confidence: 99%
“…Since 1994 another new line has been initiated based on the measurements of optical density of a coherent laser beam [5] through the etched SSNTDs. This technique was achieved using laser light ranged from UV to IR [6][7][8][9][10][11]. A further step was accomplished by introducing the concept of scattering based on a study of tracks of coherent light from the etched detector [12].…”
Section: Introductionmentioning
confidence: 99%