“…Atmospheric pressure CVD (APCVD) is the most basic method of chemical vapour deposition, simply heating precursors to roughly half of its boiling point so that a vapour is evolved, then pushing the vapour to a heated reactor where it decomposes, depositing a film onto a substrate. 3 This method is commonly employed to deposit functional metal oxide thin films from simple molecular precursors, including TiO2, [4][5][6] VO2(M), [7][8][9] SnO2, [10][11][12] Fe2O3, 13 WO3, 14,15 ZnO, [16][17][18] α-Al2O3, 19,20 as well as many others. 21 Despite widespread use in the deposition of metal oxide coatings, little is known about reactions that occur within the gas phase during the deposition of the thin film.…”