Study of 120 MeV Ni7+ ion beam irradiated SnO2/Ag/SnO2 multilayer thin films

Sharma, Vikas; Sharma, Neeru; Surbhi, .; Singh, Satyavir; Singh, Devendra; Makhija, Garima; Sachdev, K.

doi:10.1063/1.4980550

AIP Conference Proceedings

2017

DOI: 10.1063/1.4980550

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Study of 120 MeV Ni7+ ion beam irradiated SnO2/Ag/SnO2 multilayer thin films

Vikas Sharma¹,

Neeru Sharma²,

. Surbhi³

et al.

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2022

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“…[1][2][3][4] Multilayer films involving metal oxide/ metal/metal oxide were inspected to develop the optoelectronic properties of transparent conducting films comparable to single layer films. Patterns for the functional multilayers are TiO 2 /Cu/TiO 2 , 5,6 ZnO/Ag/ZnO, 7 TiO x /Ag/TiO x , 8 ITO/Cu/ITO, 9 SnO 2 /Cu/SnO 2 , 10 SnO 2 /Ag/SnO 2 , 11 WO 3 /Ag/WO 3 12 and CdO/Cu/CdO. 13 The recompenses characterized by multilayer films than single-layer TCO films are; enhanced durability metal films, small sheet resistance, similar optical transparency in the visible range, and lower film thickness.…”

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confidence: 99%

Optoelectronic Properties of ZrO₂/Cu/ZrO₂ Multilayers Prepared by DC Pulsed Magnetron Sputtering for Electrode and Nano-Filter Applications

Raaif

El-Moula

Hossary

et al. 2022

ECS J. Solid State Sci. Technol.

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ZrO2/Cu/ZrO2 nanostructured multilayers were constructed on glass with diverse Cu interlayer thickness (5-25 nm) employing pulsed DC magnetron sputtering. The optoelectronics and structural characteristics of the multilayer films were recorded. The calculated bandgap was reduced from 3.0 to 2.68 eV as the Cu interlayer thickness increased from 0 to 25 nm. The refractive index and extinction coefficient of ZrO2/Cu/ZrO2 multilayers increased with increasing the Cu interlayer thickness in the visible range. The resistivity recorded value of 7.29x10-3 Ω•cm for ZrO2/Cu(5nm)/ZrO2 multilayer while recorded a value of 3.3×10−3 Ω•cm for ZrO2/Cu(20nm)/ZrO2 multilayer. It was found the ZrO2/Cu(20nm)/ZrO2 multilayer verified the greatest figure of merit value of 3.35×10−3 Ω-1 which signifying the best multilayer for transparent conductive film. The ZrO2/Cu/ZrO2 multilayer can be used as a platform for designing optical nano-filter for molecular detections. For this purpose, the quality factor Q, the full-width at half maximum (FWHM) and the optical response of the proposed (ZrO2/Cu/ZrO2)3/Cumid/(ZrO2/Cu/ZrO2)3 optical nano-filter model were calculated using finite difference time domain technique . The quality factor and FWHM of the proposed model recorded values of 5800 and 0.23 nm, respectively, for Cu mid thickness of 30 nm, which can be potentially engaged as optical nanofilter for molecular detections.

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confidence: 99%

Optoelectronic Properties of ZrO₂/Cu/ZrO₂ Multilayers Prepared by DC Pulsed Magnetron Sputtering for Electrode and Nano-Filter Applications

Raaif

El-Moula

Hossary

et al. 2022

ECS J. Solid State Sci. Technol.

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Study of 120 MeV Ni7+ ion beam irradiated SnO2/Ag/SnO2 multilayer thin films

Cited by 1 publication

References 10 publications

Optoelectronic Properties of ZrO₂/Cu/ZrO₂ Multilayers Prepared by DC Pulsed Magnetron Sputtering for Electrode and Nano-Filter Applications

Optoelectronic Properties of ZrO₂/Cu/ZrO₂ Multilayers Prepared by DC Pulsed Magnetron Sputtering for Electrode and Nano-Filter Applications

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Study of 120 MeV Ni7+ ion beam irradiated SnO2/Ag/SnO2 multilayer thin films

Cited by 1 publication

References 10 publications

Optoelectronic Properties of ZrO2/Cu/ZrO2 Multilayers Prepared by DC Pulsed Magnetron Sputtering for Electrode and Nano-Filter Applications

Optoelectronic Properties of ZrO2/Cu/ZrO2 Multilayers Prepared by DC Pulsed Magnetron Sputtering for Electrode and Nano-Filter Applications

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Product

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Optoelectronic Properties of ZrO₂/Cu/ZrO₂ Multilayers Prepared by DC Pulsed Magnetron Sputtering for Electrode and Nano-Filter Applications

Optoelectronic Properties of ZrO₂/Cu/ZrO₂ Multilayers Prepared by DC Pulsed Magnetron Sputtering for Electrode and Nano-Filter Applications