Study of 1340 nm Continuous Laser Invasiveness on 28 nm Advanced Technologies

Abstract

This paper presents a study about the invasiveness of 1340 nm continuous wave laser used for electrical failure analysis on 28 nm advanced technologies. It underlines the potential laser-induced degradation for deep submicron technologies that could jeopardize analysis results by modifying physical and chemical properties at substructure level. The impact of laser power on transistor morphology and electrical behavior is studied and the results of this study enable us to setup safe experimental conditions.

Failure Analysis of Damages on Advanced Technologies Induced by Picosecond Pulsed Laser During Space Radiation SEE Testing

“…With the aggressive scaling down in technology nodes, advanced microelectronic devices utilize new materials and processing methods, of which, the full comprehension on material reactions and reliability can be difficult to accomplish. Most recently, Penzes and co-workers [8] reported new observations of induced damages on 28 nm test structures via a 1340 nm continuous wave laser (commonly used in optical failure analysis). This raises concerns to the suitability of employing 1064 nm pulsed laser tests in the field of test, qualification and failure analysis as the technique itself may generate undesired artifacts.…”