Study of a neutron-resistant p+-Si/n-ZnO photodetector with avalanching gain

Zhao, Xiaolong; Chen, Liang; Peng, Wenbo; Li, Gaoming; Guo, Shuwen; He, Yongning; Ouyang, Xiaoping

doi:10.1016/j.sna.2020.112375

Cited by 7 publications

(1 citation statement)

References 39 publications

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“…Thus, a higher electrical potential is needed to cause avalanche breakdown at higher device temperatures because the acceleration time for impact ionization after carrier excitation becomes shorter. [29,41] It is considered that smaller photodiodes can improve thermal evacuation and reduce Joule heating loss, resulting in decreased avalanche breakdown voltages, even when high reverse bias voltages are applied. Moreover, it has been experimentally observed that the series resistance can be decreased by the miniaturization of photodiodes for an active area smaller than 50 μm Â 50 μm.…”

Section: Characterizationmentioning

confidence: 99%

Formation of Micro‐Patterned Ga₂O₃/Se Heterojunction and its Application to Highly Sensitive Avalanche Photodiode

Adachi

Kobayashi

2023

Physica Status Solidi (a)

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Herein, the formation of square‐shaped micropatterns of a Ga2O3/Se heterojunction avalanche photodiode (APD) at an active area of 10 μm × 10 μm and its application to a visible light sensor with high sensitivity by amplification of photocurrent density for the first time are reported. The miniaturization of the Ga2O3/Se APD improves its signal‐to‐noise ratio (SNR) by 10 dB as compared to the expected SNR. This is possible because of the improvement in thermal radiation and reduction in resistance loss. The effects of scaling on the photovoltaic conversion characteristics of Ga2O3/Se and TiO2/Se are investigated by varying the active area from 100 μm × 100 μm to 10 μm × 10 μm using photolithography and etching. A remarkable increase in the external quantum efficiency is observed for miniaturized Ga2O3/Se heterojunction APD at widths smaller than 50 μm × 50 μm by a combination of avalanche amplification and the micro‐scaling effect at a bias voltage of 15 V.

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Section: Characterizationmentioning

confidence: 99%

Formation of Micro‐Patterned Ga₂O₃/Se Heterojunction and its Application to Highly Sensitive Avalanche Photodiode

Adachi

Kobayashi

2023

Physica Status Solidi (a)

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Solar blind avalanche photodetector based on a n-β-Ga2O3/n-Si heterojunction via an introduction of AlN buffer layer for interface lattice and band Engineering

Gao,

Wang,

et al. 2024

Materials Today Physics

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Improving structural and electrical properties of p-type Al–N-doped SnO2 films with low Al content by tuning N2 concentration in sputtering gas mixture

Dan

Dang

Quach

et al. 2023

Physica B: Condensed Matter

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Study of a neutron-resistant p+-Si/n-ZnO photodetector with avalanching gain

Cited by 7 publications

References 39 publications

Formation of Micro‐Patterned Ga₂O₃/Se Heterojunction and its Application to Highly Sensitive Avalanche Photodiode

Formation of Micro‐Patterned Ga₂O₃/Se Heterojunction and its Application to Highly Sensitive Avalanche Photodiode

Solar blind avalanche photodetector based on a n-β-Ga2O3/n-Si heterojunction via an introduction of AlN buffer layer for interface lattice and band Engineering

Improving structural and electrical properties of p-type Al–N-doped SnO2 films with low Al content by tuning N2 concentration in sputtering gas mixture

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Study of a neutron-resistant p+-Si/n-ZnO photodetector with avalanching gain

Cited by 7 publications

References 39 publications

Formation of Micro‐Patterned Ga2O3/Se Heterojunction and its Application to Highly Sensitive Avalanche Photodiode

Formation of Micro‐Patterned Ga2O3/Se Heterojunction and its Application to Highly Sensitive Avalanche Photodiode

Solar blind avalanche photodetector based on a n-β-Ga2O3/n-Si heterojunction via an introduction of AlN buffer layer for interface lattice and band Engineering

Improving structural and electrical properties of p-type Al–N-doped SnO2 films with low Al content by tuning N2 concentration in sputtering gas mixture

Contact Info

Product

Resources

About

Formation of Micro‐Patterned Ga₂O₃/Se Heterojunction and its Application to Highly Sensitive Avalanche Photodiode

Formation of Micro‐Patterned Ga₂O₃/Se Heterojunction and its Application to Highly Sensitive Avalanche Photodiode