Study of activation of beryllium implantation in gallium nitride

A comparative study on Be and Mg doping in GaN films grown using a single GaN precursor via molecular beam epitaxy

“…3. The very high resistivities in the order of 10 4 O-cm were observed for all the employed Be and Mg fluxes suggesting the formation of Be-H [15,17,18] and Mg-H complexes [8][9][10][11][12]. The nature of the dopant-hydrogen complexes in the films will be discussed in detail through FT-IR investigations, but the source of hydrogen for the dopants passivation is without doubt the molecular GaN source.…”

“…Furthermore, Be is very easy to be taken into the interstitial sites during the growths making the Be-H bonding configurations more complicated [18]. During the activation annealing process, the abundant Be int -H complexes may diffuse through defects such as Ga vacancy, and finally to Ga sites before the breaking of the Be Ga -H bonds [17,18]. In conclusion, the Be-H-Be complexes may have different configurations with different energies.…”

Impact of Group-II Acceptors on the Electrical and Optical Properties of GaN

“…2,3) Deep broad PL signals have been observed in Be-doped GaN that correlate with Be concentrations, but no consistent microscopic mechanism has been proposed. 16,[19][20][21] We also note that reliable electrical data on Be-doped GaN has not been reported, and that no light-emitting diodes based on a Be-doped GaN in a p-n junction have been produced.…”

Diffusion of Mn in gallium nitride: Experiment and modelling

“…Such occupation of unexpected sites can be related to the diffusion process of Be atoms during annealing. Wang et al implanted Be ions into an MBE GaN layer grown on sapphire [10]. They activated the Be ions by rapid thermal annealing and pulsed laser annealing.…”