Study of active regions based on multiperiod GaAsN/InAs superlattice

Babichev, A. V.; E.V., Pirogov; Sobolev, M. S.; D.V., Denisov; H.A., Fominykh; Baranov, Artem; A.S., Gudovskikh; Melnichenko, I. A.; Yunin, P. A.; Nevedomsky, V. N.; V., None Tokarev M.; Ya., Ber B.; Gladyshev, A. G.; Ya., Karachinsky L.; Novikov, I. I.; Yu., Egorov А.

doi:10.21883/sc.2022.10.54909.9951

Cited by 3 publications

(2 citation statements)

References 36 publications

(50 reference statements)

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“…In all cases SL consisting of GaAsN/In(Ga)As layers were considered. The mole fraction of nitrogen in the GaAsN layers was selected based on the analysis of the peak in the PL spectra [56,57]. For the mole fraction of indium in In(Ga)As, two compositions have been proposed: InAs (SL1, SL3) and In 0.8 Ga 0.2 As (SL2, SL4).…”

Section: Resultsmentioning

confidence: 99%

Simulation of the energy-band structure of superlattice of quaternary alloys of diluted nitrides

Dashkov A.S.,

Kostromin N. A.,

Babichev A. V.

et al. 2023

Semiconductors

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The paper describes an algorithm for computing the interband transition energy for superlattices of quaternary solid solutions of diluted nitrides. Using the described method, the authors have conducted several numerical simulations of test structures with InGaAsN quantum wells for the method verification using experimental data and comparison with other approaches. Simulation results showed the validity of the used approach. The hybridization parameter estimation method for Indium mole-fraction below 30% is presented. Based on simulation results, the authors propose InGaAs/GaAsN superlattices' parameters for the implementation of the source emitting in the 1.3 μm spectral range Keywords: superlattices, diluted nitrides, interband transitions, numerical simulations, hybridization parameter.

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Section: Resultsmentioning

confidence: 99%

Simulation of the energy-band structure of superlattice of quaternary alloys of diluted nitrides

Dashkov A.S.,

Kostromin N. A.,

Babichev A. V.

et al. 2023

Semiconductors

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“…Во всех случаях нами рассматривались СР, состоящие из слоев GaAsN/In(Ga)As. Мольная доля азота в слоях GaAsN была подобрана на основе анализа пика в спектрах ФЛ [56,57]. Для мольной доли индия в In(Ga)As были предложены два состава: InAs (СР1, СР3) и In 0.8 Ga 0.2 As (СР2, СР4).…”

Section: результаты и обсуждениеunclassified

Моделирование Зонной Структуры Сверхрешеток На Основе "Разбавленных" Нитридов

Dashkov¹,

Kostromin²,

Babichev³

et al. 2023

Физика И Техника Полупроводников

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The paper describes an algorithm for computing the interband transition energy for superlattices of quaternary solid solutions of diluted nitrides. Using the described method, the authors have conducted several numerical simulations of test structures with InGaAsN quantum wells for the method verification using experimental data and comparison with other approaches. Simulation results showed the validity of the used approach. The hybridization parameter estimation method for Indium mole-fraction below 30 % is presented. Based on simulation results, the authors propose InGaAs/GaAsN superlattices' parameters for the implementation of the source emitting in the 1.3 µm spectral range.

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Long-Wavelength VCSELs: Status and Prospects

et al. 2023

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Single-mode long-wavelength (LW) vertical-cavity surface-emitting lasers (VCSELs) present an inexpensive alternative to DFB-lasers for data communication in next-generation giga data centers, where optical links with large transmission distances are required. Narrow wavelength-division multiplexing systems demand large bit rates and single longitudinal and transverse modes. Spatial division multiplexing transmission through multicore fibers using LW VCSELs is enabling still larger-scale data center networks. This review discusses the requirements for achieving high-speed modulation, as well as the state-of-the-art. The hybrid short-cavity concept allows for the realization of f3dB frequencies of 17 GHz and 22 GHz for 1300 nm and 1550 nm range VCSELs, respectively. Wafer-fusion (WF) concepts allow the realization of long-time reliable LW VCSELs with a record single-mode output power of more than 6 mW, 13 GHz 3 dB cut-off frequency, and data rates of 37 Gbit/s for non-return-to-zero (NRZ) modulation at 1550 nm.

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Study of active regions based on multiperiod GaAsN/InAs superlattice

Cited by 3 publications

References 36 publications

Simulation of the energy-band structure of superlattice of quaternary alloys of diluted nitrides

Simulation of the energy-band structure of superlattice of quaternary alloys of diluted nitrides

Моделирование Зонной Структуры Сверхрешеток На Основе "Разбавленных" Нитридов

Long-Wavelength VCSELs: Status and Prospects

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