Study of Al thermal diffusion in ZnTe using secondary ion mass spectroscopy

Tanaka, Tooru; Murata, Norihiro; Saito, Katsuhiko; Nishio, Mitsuhiro; Guo, Qi; Ogawa, Hiroshi

doi:10.1002/pssb.200675133

Cited by 7 publications

(4 citation statements)

References 7 publications

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“…In good agreement with our previous study, 5) a rapid decrease in the Al concentration was observed at an Al concentration of approximately 10 18 cm À3 in all the cases in Fig. 5, yielding a fairly steep interface between the diffused layer and the substrate.…”

Section: Resultssupporting

confidence: 93%

ZnTe-Based Light-Emitting Diodes Fabricated by Solid-State Diffusion of Al through Al Oxide Layer

Tanaka

Nishio

Guo

et al. 2009

jjap

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The solid-state diffusion of Al in ZnTe through an Al oxide layer was examined for the fabrication of ZnTe-based light-emitting diodes (LEDs). By changing the thickness of the Al oxide layer deposited on a clean ZnTe surface, the Al concentration at the surface of ZnTe can be adjusted. The excellent uniformity of the diffusion depth of Al was obtained by using the Al oxide layer, in contrast to the previous oxide layer prepared by O radical irradiation. Current–voltage (I–V) characteristics and the output power of ZnTe LED can be controlled by the thickness of the Al oxide layer. The maximum output power obtained was as high as 18 µW under a forward current density of 8 A/cm2 in spite of a strong self-absorption effect. Therefore, the Al oxide layer can be used as a good diffusion-limiting layer for fabricating ZnTe LEDs by thermal diffusion.

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Section: Resultssupporting

confidence: 93%

ZnTe-Based Light-Emitting Diodes Fabricated by Solid-State Diffusion of Al through Al Oxide Layer

Tanaka

Nishio

Guo

et al. 2009

jjap

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“…This results from the finding that the diffusion coefficient of Al is dependent on the Al concentration in ZnTe, as has been reported previously. 5) To determine whether the O atoms diffused simultaneously, the depth profile of the O concentration was measured by SIMS, and the result is shown in Fig. 4.…”

Section: Resultsmentioning

confidence: 99%

Fabrication of ZnTe Light-Emitting Diode by Al Thermal Diffusion through Surface Oxidation Layer

Tanaka¹,

Nishio

Guo³

et al. 2008

jjap

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A ZnTe light-emitting diode (LED) was fabricated by Al thermal diffusion through an oxidation layer formed by O radical irradiation onto the surface of the ZnTe. The Al concentration in the diffused layer could be controlled by changing the O radical irradiation time, because this changes the thickness of the oxidation layer, resulting in a change in the Al concentration on ZnTe surface. The performance of the ZnTe LED strongly depends on the O radical irradiation time. Strong electroluminescence was observed in the ZnTe LEDs.

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“…В этой работе наблюдалось резкое (на ∼ 4 порядка) падение концентрации алюминия в пространственном интервале ∼ 40 мкм. Аналогичный результат был получен этими же авторами при исследовании диффузии алюминия в ZnTe [22]. Авторы объясняли это резким уменьшением коэффициента диффузии алюминия при уменьшении его концентрации.…”

Section: обсуждение результатовunclassified

Исследование пространственного распределения люминесценции в диапазоне 0.44-0.75 мкм CVD-ZnSe, легированного алюминием и железом

Калинушкин¹,

Гладилин²,

Уваров³

et al. 2021

Физика И Техника Полупроводников

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Spatial distribution of luminescence characteristics of CVD-ZnSe doped with Aluminum and both Aluminum and Iron by thermal diffusion were studied. The diffusion method leads to formation of two areas in crystal volume: (1) area with high aluminum concentration in which the luminescence of defective-impurity centers (DICs) dominates and exciton luminescence is absent and (2) area with low aluminum concentration in which exciton luminescence dominates. The border of two areas recognized on luminescence map is sharp that not corresponded to diffusion nature. The result is explained by assuming the anomalous nature of aluminum diffusion, leading to a sharp change in the aluminum concentration at a certain distance from the doping surface. Method of aluminum doping process applied in present paper leaded to weakens of well-known luminescence suppression effect by iron ions in ZnSe.

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Study of Al thermal diffusion in ZnTe using secondary ion mass spectroscopy

Cited by 7 publications

References 7 publications

ZnTe-Based Light-Emitting Diodes Fabricated by Solid-State Diffusion of Al through Al Oxide Layer

ZnTe-Based Light-Emitting Diodes Fabricated by Solid-State Diffusion of Al through Al Oxide Layer

Fabrication of ZnTe Light-Emitting Diode by Al Thermal Diffusion through Surface Oxidation Layer

Исследование пространственного распределения люминесценции в диапазоне 0.44-0.75 мкм CVD-ZnSe, легированного алюминием и железом

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