Study of AlGaN-based deep ultraviolet laser diodes using one-way step-shaped quantum barriers and symmetrical step-shaped electron and hole blocking layers

Zhang, Aoxiang; Ren, Bingyang; Wang, Fang; Liou, Juin J.; Liu, Yuhuai

doi:10.1117/1.oe.61.10.106101

Cited by 3 publications

(1 citation statement)

References 35 publications

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“…It can accurately simulate the interaction between multiple side modes of the laser beam. It can self-consistently solve Poisson's equation, the current continuity equation, and drift diffusion model to analyze the optical and electrical characteristics of lasers [20][21][22]. The ridge width and cavity length of the four lasers are 3 µm and 600 µm, respectively.…”

Section: Simulation Parametersmentioning

confidence: 99%

Improved Design of Slope-Shaped Hole-Blocking Layer and Electron-Blocking Layer in AlGaN-Based Near-Ultraviolet Laser Diodes

Gao,

Yang,

Jia

et al. 2024

Nanomaterials

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The injection and leakage of charge carriers have a significant impact on the optoelectronic performance of GaN-based lasers. In order to improve the limitation of the laser on charge carriers, a slope-shape hole-barrier layer (HBL) and electron-barrier layer (EBL) structure are proposed for near-UV (NUV) GaN-based lasers. We used Crosslight LASTIP for the simulation and theoretical analysis of the energy bands of HBL and EBL. Our simulations suggest that the energy bands of slope-shape HBL and EBL structures are modulated, which could effectively suppress carrier leakage, improve carrier injection efficiency, increase stimulated radiation recombination rate in quantum wells, reduce the threshold current, improve optical field distribution, and, ultimately, improve laser output power. Therefore, using slope-shape HBL and EBL structures can achieve the superior electrical and optical performance of lasers.

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Section: Simulation Parametersmentioning

confidence: 99%

Improved Design of Slope-Shaped Hole-Blocking Layer and Electron-Blocking Layer in AlGaN-Based Near-Ultraviolet Laser Diodes

Gao,

Yang,

Jia

et al. 2024

Nanomaterials

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A Review of Challenges, Solutions, and Improvements in the Performance of Deep Ultraviolet Semiconductor Laser Diodes (DUV LDs)

Rehman,

Bi,

Rahman

et al. 2024

ACS Appl. Electron. Mater.

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As eco-friendly light sources, AlGaN-based deep ultraviolet laser diodes (AlGaN DUV LDs) employing aluminum gallium nitride that emit between 200 and 300 nm have seen various applications in replacing the traditional mercury DUV light sources, such as photolithography, fluorescence microscopy, and water purification. In this review, we present structures, applications, and advantages of the AlGaN DUV LDs. In addition, limitations and challenges of the AlGaN DUV LDs will be covered. A comparative analysis of the previous researchers' work regarding strategies that include various designs of electron blocking layers (EBLs), cladding layers, waveguides, and quantum barriers in enhancing the performance of DUV LDs will be reviewed, and the underlying physics of these designs in improving the performance of AlGaN DUV LDs will be discussed.

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Optimization of AlGaN-based deep ultraviolet light emitting diodes with superlattice step doped electron blocking layers

Zhang,

Xing,

et al. 2024

Opt. Express

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The superlattice electron blocking layer (EBL) has been proposed to reduce the electron leakage of the deep ultraviolet light emitting diodes (DUV-LEDs). However, the hole transport is hindered by the barriers of EBL and the improvement of hole injection efficiency still suffers enormous challenges. The superlattice step doped (SLSD) EBL is proposed to improve the hole injection efficiency while enhancing the electron confinement capability. The SLSD EBL enhances the electron confinement capability by multi-reflection effects on the electron wave function. And a built-in electric field towards the active region is generated by superlattice step doping, which facilitates the transport of holes into the multiple quantum wells. The Advaced Physical Model of Semiconductor Devices (APSYS) software is used to simulate the DUV-LEDs with conventional EBL, superlattice EBL, superlattice doped EBL, and SLSD EBL. The results indicate that the SLSD EBL contributes to the increased electron concentration in the multiple quantum wells, the reduced electron leakage in the p-type region, the increased hole injection current, and the increased radiative recombination rate. When the current is 60 mA, the external quantum efficiency of DUV-LED with SLSD EBL is increased to 5.27% and the output power is increased to 13.81 mW. The SLSD EBL provides a valuable reference for solving the problems of serious electron leakage and insufficient hole injection of the DUV-LEDs.

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Study of AlGaN-based deep ultraviolet laser diodes using one-way step-shaped quantum barriers and symmetrical step-shaped electron and hole blocking layers

Cited by 3 publications

References 35 publications

Improved Design of Slope-Shaped Hole-Blocking Layer and Electron-Blocking Layer in AlGaN-Based Near-Ultraviolet Laser Diodes

Improved Design of Slope-Shaped Hole-Blocking Layer and Electron-Blocking Layer in AlGaN-Based Near-Ultraviolet Laser Diodes

A Review of Challenges, Solutions, and Improvements in the Performance of Deep Ultraviolet Semiconductor Laser Diodes (DUV LDs)

Optimization of AlGaN-based deep ultraviolet light emitting diodes with superlattice step doped electron blocking layers

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