2019
DOI: 10.1088/2053-1591/ab1667
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Study of amorphous Sn–Se–Bi–Te semiconducting materials at an average coordination number <r>= 2.4

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Cited by 4 publications
(4 citation statements)
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“…) where m i is the atomic mass fraction and D i is the density of the i th atom [32]. The values of fundamental densities for Sb is 6.697 g cm −3 , Se is 4.28 g cm −3 and Bi is 8.498 g cm −3 [33,36]. The values of the density calculated for samples on Bi incorporation to Sb 2 Se 3 system show an increase with increase in Bi content (table 2).…”
Section: Density(ρ)mentioning
confidence: 91%
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“…) where m i is the atomic mass fraction and D i is the density of the i th atom [32]. The values of fundamental densities for Sb is 6.697 g cm −3 , Se is 4.28 g cm −3 and Bi is 8.498 g cm −3 [33,36]. The values of the density calculated for samples on Bi incorporation to Sb 2 Se 3 system show an increase with increase in Bi content (table 2).…”
Section: Density(ρ)mentioning
confidence: 91%
“…Bi where, a b ¡ , , and are the atomic fractions and N Sb , N Se and N Bi are the coordination numbers for Sb, Se, Bi respectively. The values of coordination number for Sb, Se and Bi are 3, 2, and 3 respectively [32,33]. For 〈Z〉 less than 2.4 system is under coordinated region, rigid regions are unconnected and isolated, for 〈Z〉 equal to 2.4 system is an ideal and for 〈Z〉 greater than 2.4, the system is over coordinated regions and stressed rigid [32].…”
Section: Average Coordination Number 〈Z〉mentioning
confidence: 99%
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