2021
DOI: 10.1021/acs.cgd.1c00280
|View full text |Cite
|
Sign up to set email alerts
|

Study of an Epitaxial Regrowth Process by MOCVD for Photonic-Crystal Surface-Emitting Lasers

Abstract: We study a metal organic chemical vapor deposition regrowth process for electrically driven photonic-crystal surface-emitting lasers (PCSELs). The photonic-crystal (PC) structure consisting of air voids embedded in semiconductor materials is fabricated on the topmost p-GaAs layer of a base-epitaxial wafer followed by the regrowth of a p-Al0.45GaAs layer and a p+-GaAs contact layer, consecutively. The effect of both ex situ and in situ surface treatment before regrowth processes together with the regrowth param… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2

Citation Types

0
2
0

Year Published

2022
2022
2024
2024

Publication Types

Select...
5
1

Relationship

1
5

Authors

Journals

citations
Cited by 8 publications
(2 citation statements)
references
References 25 publications
0
2
0
Order By: Relevance
“…Historically PCSELs have been formed by wafer fusion, but these devices suffered from low output powers due to defect states in the PC region as a result of regions of discontinuous crystallinity formed during the wafer fusion process 7 9 . More recently our group 10 12 along with several others have demonstrated PCSELs formed by epitaxial regrowth 13 17 . The move to epitaxial regrowth by metalorganic vapour phase epitaxy (MOVPE) has demonstrated a pathway to high volume production of highly reliable devices leveraging all the knowledge gained over many years of InP DFB development.…”
Section: Introductionmentioning
confidence: 87%
“…Historically PCSELs have been formed by wafer fusion, but these devices suffered from low output powers due to defect states in the PC region as a result of regions of discontinuous crystallinity formed during the wafer fusion process 7 9 . More recently our group 10 12 along with several others have demonstrated PCSELs formed by epitaxial regrowth 13 17 . The move to epitaxial regrowth by metalorganic vapour phase epitaxy (MOVPE) has demonstrated a pathway to high volume production of highly reliable devices leveraging all the knowledge gained over many years of InP DFB development.…”
Section: Introductionmentioning
confidence: 87%
“…Many efforts have been made to increase the output power of PCSELs. They include buried air hole photonic crystal structures, introducing DBR into a PCSEL structure, filling factor optimization, and nonsymmetric photonic crystal design [17][18][19][20][21][22]. As well as these, PCSELs are especially suitable for power scaling [23,24] because of the in-plane oscillation behavior and the absence of catastrophic damage.…”
Section: Introductionmentioning
confidence: 99%