Study of Arsenic Doped CdSeTe Solar Cells Using Transmission Electron Microscopy

Guo, Jinglong; Sharma, Abhinav; Munshi, Amit; Reich, Carey; Danielson, Adam; Sampath, Walajabad S.; Swain, Santosh K.; Klie, Robert F.

doi:10.1017/s1431927620017420

Cited by 1 publication

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“…This approach mitigates effects of As accumulation near the front interface where As accumulation can lead to increased interface recombination. [ 22,35–37 ] The analytical models describing graded τ bulk and N A profiles are approximations sufficient for this analysis. [ 21,22 ]…”

Section: Resultsmentioning

confidence: 99%

“…This approach mitigates effects of As accumulation near the front interface where As accumulation can lead to increased interface recombination. [22,[35][36][37] The analytical models describing graded τ bulk and N A profiles are approximations sufficient for this analysis. [21,22] Figure 3a,c compares simulated TRPL decays and instantaneous lifetime profiles with and without τ bulk grading, given a fixed acceptor carrier concentration N A = 1 Â 10 15 cm À3 .…”

Section: Effects Of Grading: Bulk Lifetime and Absorber Dopingmentioning

confidence: 99%

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Charge Carrier Lifetime Determination in Graded Absorber Solar Cells Using Time‐Resolved Photoluminescence Simulations and Measurements

et al. 2023

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Thin‐film photovoltaic device efficiencies are limited by carrier recombination, thus understanding recombination mechanisms is critical for performance improvements. Bulk minority carrier lifetime (τ bulk) is a critical parameter for solar cells but is difficult to determine in P–N junction devices, especially for high doping. As doping ≥1016 cm−3 is required for efficient drift‐charge‐carrier‐collection devices, a method for τ bulk determination in doped P–N junction devices is necessary. This work utilizes time‐resolved photoluminescence (TRPL) simulations to quantify bulk and interface recombination properties in highly doped, graded absorber CdSeTe structures. The two methods developed here for τ bulk determination include utilization of an instantaneous lifetime representation to guide TRPL fitting and direct comparison between measured and simulated decays. Simulations verified that both methods are valid for state‐of‐the‐art device architectures which include graded bandgap absorbers, graded doping, and graded lifetimes. Shifts in the dominant recombination mechanism are identified for sufficiently long τ bulk, where front and back interface quality plays a more prominent role. Evaluation of surface recombination velocities and conduction band offset illustrate electro‐optical advantages of a positive conduction band offset and highlight the necessity of improved interfaces as bulk quality in photovoltaic devices improves.

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Section: Resultsmentioning

confidence: 99%

Section: Effects Of Grading: Bulk Lifetime and Absorber Dopingmentioning

confidence: 99%

Charge Carrier Lifetime Determination in Graded Absorber Solar Cells Using Time‐Resolved Photoluminescence Simulations and Measurements

et al. 2023

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Study of Arsenic Doped CdSeTe Solar Cells Using Transmission Electron Microscopy

Abstract: This is an Accepted Manuscript for the Microscopy and Microanalysis 2020 Proceedings. This version may be subject to change during the production process.

Cited by 1 publication

References 6 publications

Charge Carrier Lifetime Determination in Graded Absorber Solar Cells Using Time‐Resolved Photoluminescence Simulations and Measurements

Charge Carrier Lifetime Determination in Graded Absorber Solar Cells Using Time‐Resolved Photoluminescence Simulations and Measurements

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