Study of atomic layer epitaxy of zinc oxide by in-situ quartz crystal microgravimetry

Yousfi, El Bekkaye; Fouache, Jacques; Lincot, Daniel

doi:10.1016/s0169-4332(99)00330-x

Cited by 177 publications

(155 citation statements)

References 12 publications

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“…The undoped ZnO film exhibited a preferred orientation of (002) at 2θ = 34.4 o . However, with increasing Al concentration, predominant peak changes from (002) to (100) were observed, corroborating the report by Yousfi et al 12) This behavior was discussed in our previous work 6) with surface free energy changing due to the doping effect. Preferred orientation changing behavior was also observed in post-annealed samples.…”

Section: Methodssupporting

confidence: 92%

Surface Oxidation Effect During high Temperature Vacuum Annealing on the Electrical Conductivity of ZnO thin Films Deposited by ALD

Kim¹,

Choi²,

Park³

2012

Journal of the Microelectronics and Packaging Society

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The chemical, electrical, and optical properties of ZnO and Al-doped ZnO films after high temperature annealing were studied. The resistivity increased significantly after annealing at 600 o C under 10 -10 Torr atmosphere. The mechanism of the resistivity change was explored using photoemission spectroscopy and photoluminescence spectrometer. The results indicated that the amount of oxygen deficient region O-Zn bonds decreased and oxygen vacancy was decreased after the high temperature vacuum annealing. The increase in the resistivity of ZnO and Al-doped ZnO films was resulted from the decrease in carrier concentration due to a decrease in the amount of oxygen deficiency.

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Section: Methodssupporting

confidence: 92%

Surface Oxidation Effect During high Temperature Vacuum Annealing on the Electrical Conductivity of ZnO thin Films Deposited by ALD

Kim¹,

Choi²,

Park³

2012

Journal of the Microelectronics and Packaging Society

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“…Such behavior is not unusual in ALD processes and is observed, for example, in the diethylzinc and water ALD process where a number of cycles are needed before the growth starts. [43] Deviations from linearity might also occur due to changes in surface morphology, and hence changes in surface area, during the growth process. This will be discussed later in this paper in connection with the AFM characterization.…”

Section: Resultsmentioning

confidence: 99%

Atomic Layer Deposition of NiO by the Ni(thd)₂/H₂O Precursor Combination

Lindahl

Ottosson

Carlsson

2009

Chemical Vapor Deposition

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Polycrystalline nickel oxide is deposited on SiO 2 substrates by alternating pulses of bis(2,2,6,6-tetramethylheptane-3,5-dionato)nickel(II) (Ni(thd) 2 ) and H 2 O. The deposition process shows atomic layer deposition (ALD) characteristics with respect to the saturation behavior of the two precursors at deposition temperatures up to 275 8C. The growth of nickel oxide is shown to be highly dependent on surface hydroxide groups, and a large excess of H 2 O is required to achieve saturation. Throughout the deposition temperature range the amount of carbon in the film, originating from the metal precursor ligand, is in the range 1-2%. Above 275 8C ALD growth behavior is lost in favor of thermal decomposition of the metal precursor. The initial nucleation process is studied by atomic force microscopy (AFM) and reveals nucleation of well-separated grains which coalesce to a continuous film after about 250 ALD cycles.

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“…The ALD technique has been successfully used in the past to deposit undoped and Al-doped ZnO thin films using diethyl zinc (DEZ), trimethyl aluminum (TMA), and water as the precursors. [7][8][9][10][11][12][13][14] In this work, we have investigated in detail the ALD process for depositing thin films of Al-doped ZnO and determined the extent of doping achievable using x-ray fluorescence, Seebeck coefficient, and optical reflectivity measurements.…”

Section: Introductionmentioning

confidence: 99%

Atomic layer deposition of Al-doped ZnO thin films

Tynell

Yamauchi

Karppinen

et al. 2012

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inAtomic layer deposition has been used to fabricate thin films of aluminum-doped ZnO by depositing interspersed layers of ZnO and Al 2 O 3 on borosilicate glass substrates. The growth characteristics of the films have been investigated through x-ray diffraction, x-ray reflection, and x-ray fluorescence measurements, and the efficacy of the Al doping has been evaluated through optical reflectivity and Seebeck coefficient measurements. The Al doping is found to affect the carrier density of ZnO up to a nominal Al dopant content of 5 at. %. At nominal Al doping levels of 10 at. % and higher, the structure of the films is found to be strongly affected by the Al 2 O 3 phase and no further carrier doping of ZnO is observed.

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Study of atomic layer epitaxy of zinc oxide by in-situ quartz crystal microgravimetry

Cited by 177 publications

References 12 publications

Surface Oxidation Effect During high Temperature Vacuum Annealing on the Electrical Conductivity of ZnO thin Films Deposited by ALD

Surface Oxidation Effect During high Temperature Vacuum Annealing on the Electrical Conductivity of ZnO thin Films Deposited by ALD

Atomic Layer Deposition of NiO by the Ni(thd)₂/H₂O Precursor Combination

Atomic layer deposition of Al-doped ZnO thin films

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Study of atomic layer epitaxy of zinc oxide by in-situ quartz crystal microgravimetry

Cited by 177 publications

References 12 publications

Surface Oxidation Effect During high Temperature Vacuum Annealing on the Electrical Conductivity of ZnO thin Films Deposited by ALD

Surface Oxidation Effect During high Temperature Vacuum Annealing on the Electrical Conductivity of ZnO thin Films Deposited by ALD

Atomic Layer Deposition of NiO by the Ni(thd)2/H2O Precursor Combination

Atomic layer deposition of Al-doped ZnO thin films

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Atomic Layer Deposition of NiO by the Ni(thd)₂/H₂O Precursor Combination