Study of body and oxide thickness variation on analog and RF performance of underlap DG-MOSFETs

Pati, Sudhansu Kumar; Koley, Kalyan; Dutta, Arka; Mohankumar, N.; Sarkar, Chandan Kumar

doi:10.1016/j.microrel.2014.02.008

Cited by 24 publications

(7 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It can be seen that as oxide thickness increases, parasitic capacitances decreases due to reduction in inversion charge. The same trend is shown by Pati et al and Dastjerdy et al [40,41] The enhancement of transconductance due to better gate control on the channel for oxide thickness 1 nm compared to 3 nm does not counter balance the effect of the gate capacitances. As a result, t ox = 3nm has better cut-off frequency and maximum oscillator frequency as can be clearly shown in Fig.…”

Section: Effect Of Oxide Thicknesssupporting

confidence: 75%

Impact of device parameter variation on RF performance of gate electrode workfunction engineered (GEWE)-silicon nanowire (SiNW) MOSFET

2015

View full text Add to dashboard Cite

In this paper, we explore the quantitative investigation of the high-frequency performance of gate electrode workfunction engineered (GEWE) silicon nanowire (SiNW) MOSFET and compared with silicon nanowire MOSFET(SiNW MOSFET) using device simulators: ATLAS and DEVEDIT 3D. Simulation results demonstrate the improved RF performance exhibited by GEWE-SiNW MOS-FET over SiNW MOSFET in terms of transconductance (g m ), cut-off frequency ( f T ), maximum oscillator frequency ( f MAX ), power gains (Gma, G MT ) parasitic capacitances, stern's stability factor and intrinsic delay. Further, using three-dimensional device simulations, we have also examined the efficacy of parameter variations in terms of oxide thickness, radius of silicon nanowire, channel length and gate metal workfunction engineering on RF/microwave figure of merits of GEWE-SiNW MOSFET. Simulation result reveals significant enhancement in f T and f MAX ; and a reduction in switching time in GEWE-SiNW MOSFET due to alleviated short channel effects, improved drain current and smaller parasitic capacitance, thus providing detailed knowledge about the device's RF performance at such aggressively scaled dimensions.

show abstract

Section: Effect Of Oxide Thicknesssupporting

confidence: 75%

Impact of device parameter variation on RF performance of gate electrode workfunction engineered (GEWE)-silicon nanowire (SiNW) MOSFET

2015

View full text Add to dashboard Cite

show abstract

“…Low-noise amplifiers (LNA) designing is as important as power gains for RF amplifiers and in this way, stability is the key parameter. Amplifier's stability is also known as Stern stability factor (K), which has a value of K usually < 1 at low frequency and > 1 at high frequency [15,16]. K can be defined by Eq.…”

Section: Resultsmentioning

confidence: 99%

RF Performance Assessment of Sub-8nm GaN-SOI-FinFET Using Power Gain Parameters

Kumar

Gupta²,

Goyal

et al. 2022

2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience &Amp; Nanotechnology (5NANO

View full text Add to dashboard Cite

This work presents, a radio frequency (RF) performance evaluation of nanoscale gallium nitride-silicon-oninsulator fin field-effect transistor (GaN-SOI-FinFET). All the results have simultaneously been compared with conventional FinFET (Conv. FinFET). All the results show that the power gains have significantly improved in terms of Gma (maximum available power gain), Gms (maximum stable power gain), stern stability factor, GMT (maximum transducer power gain), and an appreciable reduction in intrinsic delay as compared to conventional FinFET. Current gain unilateral power gain and have also been evaluated for the extraction of fT (cut-off frequency) and fMAX (maximum oscillator frequency) respectively. fT and fMAX enhance by 88.8% and 94.6% respectively. This analysis has been done at several THz frequencies. The implementation of GaN in the channel reduces the parasitic capacitance and paves the way for highperformance RF applications.

show abstract

“…The JL-DG-MOSFET [ 1 , 2 , 3 , 4 , 5 ] and JL-GSDG-MOSFET [ 1 , 6 , 7 ] are considered to design the biosensors. The biomolecule sensing regions are created at the drain and source side as a nanogap cavity.…”

Section: Working Principle Of the Devicementioning

confidence: 99%

“…GAA MOSFET performs superior to DG MOSFET regarding threshold voltage and DIBL effect. Pati et al [ 4 ] reported the RF performance of the underlap double-gate MOSFETs taking the variation of body and oxide thickness. The process-dependent parameters (PDPs) have significant effect on the analog and RF performance of underlap double-gate MOSFET (UDG-MOSFET).…”

Section: Introductionmentioning

confidence: 99%

A Novel Dielectric Modulated Gate-Stack Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor-Based Sensor for Detecting Biomolecules

Chowdhury

Appasani

et al. 2023

Sensors

View full text Add to dashboard Cite

In this article, the performance of n-type junctionless (JL) double-gate (DG) MOSFET-based biosensors with and without gate stack (GS) has been studied. Here, the dielectric modulation (DM) method is applied to detect biomolecules in the cavity. The sensitivity of n-type JL-DM-DG-MOSFET and n-type JL-DM-GSDG-MOSFET-based biosensors have also been evaluated. The sensitivity (ΔVth) improved in JL-DM-GSDG MOSFET/JL-DM-DG-MOSFET-based biosensors for neutral/charged biomolecules is 116.66%/66.66% and 1165.78%/978.94%, respectively, compared with the previously reported results. The electrical detection of biomolecules is validated using the ATLAS device simulator. The noise and analog/RF parameters are compared between both biosensors. A lower threshold voltage is observed in the GSDG-MOSFET-based biosensor. The Ion/Ioff ratio is higher for DG-MOSFET-based biosensors. The proposed GSDG-MOSFET-based biosensor demonstrates higher sensitivity than the DG-MOSFET-based biosensor. The GSDG-MOSFET-based biosensor is suitable for low-power, high-speed, and high sensitivity applications.

show abstract

Study of body and oxide thickness variation on analog and RF performance of underlap DG-MOSFETs

Cited by 24 publications

References 11 publications

Impact of device parameter variation on RF performance of gate electrode workfunction engineered (GEWE)-silicon nanowire (SiNW) MOSFET

Impact of device parameter variation on RF performance of gate electrode workfunction engineered (GEWE)-silicon nanowire (SiNW) MOSFET

RF Performance Assessment of Sub-8nm GaN-SOI-FinFET Using Power Gain Parameters

A Novel Dielectric Modulated Gate-Stack Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor-Based Sensor for Detecting Biomolecules

Contact Info

Product

Resources

About