Study of carrier concentration profiles in Al‐implanted Ge by micro‐Raman spectroscopy under different excitation wavelengths

Abstract

The distribution profile of Al implanted in crystalline Ge has been investigated by micro-Raman spectroscopy. Using different excitation laser lines, corresponding to different optical penetration depths, the Al concentration at different depths beneath the sample surface has been studied. We have found a strong correlation between the intensity of the Al–Ge Raman peak at ~370 cm1, which is due to the local vibrational mode of substitutional Al atoms, and the carrier concentration profile, obtained by the spreading resistance profiling analysis. A similar connection has been also observed for both shape and position of the Ge–Ge Raman peak at ~300 cm1. According to these experimental findings, we propose here a fast and nondestructive method, based on micro-Raman spectroscopy under different excitation wavelengths, to estimate the carrier concentration profiles in Al-implanted Ge

Large area Germanium Tin nanometer optical film coatings on highly flexible aluminum substrates

“…Actually, the shoulder on the left side of the Ge-Ge 1 st peak is due to the Ge-Sn peak at ~285 cm −1 22 . The typical Ge-Al peak is at ~370 cm −1 23 , however, in this work the Al implanted GeSn can be excluded from the Raman spectra.…”

Recent advances in linear and nonlinear Raman spectroscopy. Part VIII

“…They propose a fast and nondestructive method to estimate the carrier concentration profiles in Al-implanted Ge. [203] Whale and coworkers report a DFT-assisted interpretation of the Raman spectra of hydrogen-ordered ice XV, and thereby establish a link between crystallographic data and spectroscopic information. [204] Xiang and coworkers carried out an in situ Raman spectrometry investigation that yielded physical insight into the superconductivity of Nb 2 AlC.…”

“…Sanson and coworkers studied carrier concentration profiles in Al‐implanted Ge by micro‐Raman spectroscopy using different excitation wavelengths. They propose a fast and nondestructive method to estimate the carrier concentration profiles in Al‐implanted Ge . Whale and coworkers report a DFT‐assisted interpretation of the Raman spectra of hydrogen‐ordered ice XV, and thereby establish a link between crystallographic data and spectroscopic information .…”

From GISR 2012: present status and future perspectives of Raman researches in Italy

“…Some researchers have studied the distribution profile of Al implanted in crystalline germanium by exploiting the optical penetration depths of different excitation wavelengths. By merely using laser lines of different wavelengths, it is then possible to probe the vibrational dynamics of implanted samples at different depths beneath the sample surface, without bevel of the sample surface …”

“…By merely using laser lines of different wavelengths, it is then possible to probe the vibrational dynamics of implanted samples at different depths beneath the sample surface, without bevel of the sample surface. [4] Finally, advances in solid state spectroscopy have been also presented for the characterization of zirconim dodecarborate thin films, stibnite, superconducting borates and orthophosphate (LuPO 4 ) single crystals. In this last case, 11 of the 12 independent components of the polarizability tensor, expected on the basis of the group theory for LuPO 4 , were selected in turn and assigned in symmetry.…”