Study of Carrier Mobilities in 4H-SiC MOSFETS Using Hall Analysis

Das, Suman; Zheng, Yuqian; Ahyi, A. C.; Kuroda, Marcelo A.; Dhar, Sarit

doi:10.3390/ma15196736

Cited by 10 publications

(3 citation statements)

References 29 publications

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“…For n-channel MOSFETs, μ free was assumed to be 1-10 cm 2 V −1 s −1 (77, 100 K), 10-50 cm 2 V −1 s −1 (200 K) and 50-150 cm 2 V −1 s −1 (300, 400 K), taking account of MOS-Hall effect data. 33) For p-channel MOSFETs, μ free was assumed to be 5-20 cm 2 V −1 s −1 for all temperatures, 34) due to the lack of MOS-Hall effect data.…”

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confidence: 99%

Different temperature dependence of mobility in n- and p-channel 4H-SiC MOSFETs

Chi,

Tachiki,

Mikami

et al. 2023

Jpn. J. Appl. Phys.

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The impact of interface state density (D it) near the conduction band edge (E C) and the valence band edge (E V) on the field-effect mobility (μ FE) of NO- and N2-annealed n- and p-channel MOSFETs was investigated. With lowering the temperature, μ FE of n-channel MOSFETs decreased whereas μ FE increased in p-channel devices. Despite the comparable D it values near E C and E V, p-channel MOSFETs have less trapped carriers due to a deeper surface Fermi level caused by the larger effective masses of holes, resulting in smaller Coulomb scattering, and this may cause the different temperature dependence of μ FE in n- and p-channel MOSFETs.

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confidence: 99%

Different temperature dependence of mobility in n- and p-channel 4H-SiC MOSFETs

Chi,

Tachiki,

Mikami

et al. 2023

Jpn. J. Appl. Phys.

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“…MOSFETs is primarily affected by the transverse electric field, carbon clusters, and substrate doping [19]. Approaches to address this issue include nitridation, high-k material utilization, and phosphorous doping.…”

Section: Electron Mobility Electron Mobility In Sicmentioning

confidence: 99%

Status and prospects of wide bandgap semiconductor devices

Zhang,

Zhang

2023

ACE

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Wide bandgap semiconductor materials, such as silicon carbide (SiC) and gallium nitride (GaN), have attracted significant attention due to their exceptional electronic and thermal properties, making them ideal for high-power and high-frequency applications. This study provides a comprehensive review of SiC and GaN materials and recent developments in power electronics, radio frequency (RF) devices. The study focuses on the unique properties of these materials, which enable them to outperform traditional silicon-based devices in terms of efficiency, power density, and overall performance. The objectives include examining material properties, assessing SiC and GaN-based device performance, comparing electron mobility, on-resistance, and temperature dependence, and identifying areas for future research. The content covers a range of devices, including SiC MOSFETs, IGBTs, GaN HEMTs, and their applications, with a focus on recent advances in material quality and device reliability. The research contribution of the paper lies in its comprehensive analysis, which serves as a valuable reference for researchers, manufacturers, and policymakers working to accelerate the development of advanced materials and technologies. The successful implementation of SiC and GaN-based devices will lead to more energy-efficient systems, enhanced performance across various sectors, and a reduction in global energy consumption and environmental impact, revolutionizing the electronics industry.

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“…Despite the attractive properties of4H-SiC and its already wide use for power electronics, the performances of SiC metal-oxide-semiconductor field effect transistors (MOSFETs),which are the most fostered switches used in electric conversion systems [1], remain limited essentially due to low channel mobility [1,2]. This is mainly attributed to electrically active defects at the SiO 2 /SiC.…”

Section: Introductionmentioning

confidence: 99%