Study of charging phenomena in MgO single crystal: effect of polishing, annealing temperature and crystallographic orientation

Dammak, N; Trigui, F; Temga, T.; Kallel, A.; Fakhfakh, Z.; Tréheux, D.

doi:10.1016/s0955-2219(01)00427-7

Cited by 13 publications

(4 citation statements)

References 7 publications

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“…MgO is also an ideal dielectric material for the fabrication of electronic devices such as capacitor, transistor, and memory devices [16,20,21]. A considerable amount of literature has reported deposition and characterization of MgO as a thin layer on substrates [20][21][22][23][24]. Improvement in device characteristics can be achieved for MgO particles within the range of 42 to 84 nm [25].…”

Section: Magnesium Oxide As Filler In a Nanocomposite Thinmentioning

confidence: 99%

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Dielectric and Structural Properties of Poly(vinylidene fluoride) (PVDF) and Poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE) Filled with Magnesium Oxide Nanofillers

Arshad

Wahid

Majid

et al. 2019

Journal of Nanomaterials

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This study examines the dielectric properties of filled PVDF film and filled PVDF-TrFE film incorporated with 1, 3, 5, and 7 weight percentages of magnesium oxide (MgO) nanofillers. The metal-insulator-metal (MIM) configuration demonstrates PVDF/MgO with 7 weight percent of MgO which produced high dielectric constant (1 kHz) with low dielectric loss. The ATR-FTIR spectra of PVDF/MgO (7%) indicate wide bonding peaks at 840 cm-1 and 880 cm-1, assigned to -CH2 and -CF2 groups, respectively. This implies the presence of high content of β-crystals in the PVDF/MgO (7%) film. A shift in the peak was observed in the same film, from 1170 cm-1 to 1180 cm-1 suggesting possible transformation from γ-crystals to β-crystals. This film showed no apparent defect on its film surface. Thus, it established that PVDF incorporated with 7% MgO can be used to produce nanocomposite thin film for low-frequency electronic devices.

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Section: Magnesium Oxide As Filler In a Nanocomposite Thinmentioning

confidence: 99%

“…Dammak and coworkers reported that annealing of MgO nanoparticle at 300°C for 2 hours was essential to remove the moisture and contamination, as well as to allow vaporization of solvent and precursor during processing [24]. This promotes better MgO particle distribution in the polymer matrix.…”

Section: Journal Of Nanomaterialsmentioning

confidence: 99%

Dielectric and Structural Properties of Poly(vinylidene fluoride) (PVDF) and Poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE) Filled with Magnesium Oxide Nanofillers

Arshad

Wahid

Majid

et al. 2019

Journal of Nanomaterials

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“…Mitchell et al [ 30 ] demonstrated that the increased substrate surface roughness reduces critical current density of the YBCO thin film by up to 2−3 times as compared with film produced on a new substrate. Dammak et al [ 33 ] studied the effect of polishing damaged MgO substrates, which resulted in pits and scratches on the polished substrates, as well as thin film degradation due to their transfer onto YBCO layer. Perry et al [ 29 ] investigated the effect of annealing in various gas compositions and found that it was particularly efficient in the regeneration of MgO surfaces from phosphoric acid‐etched samples when annealed in an oxygen environment at a high temperature of 1000 °C.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Transport Characteristics of YBCO Step‐Edge‐Based Josephson Junction on Revived MgO Substrate

Dahiya

Pal

Khare

2021

Physica Status Solidi (b)

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Herein, the combined impact of ion beam milling and postannealing treatment on the transport properties of deposited YBa2Cu3Ox (YBCO) thin film and fabricated step‐edge Josephson junction (JJ) on degraded MgO (100) substrates are investigated, and the obtained results of the YBCO thin film and fabricated step‐edge JJ on treated MgO (100) substrate are compared with the YBCO film and step‐edge junction on a fresh MgO substrate. Structural study reveals the formation of c‐axis‐oriented YBCO thin film on revived MgO substrate which is very much comparable with the YBCO film on fresh substrate. Atomic force microscopy (AFM) technique is used to confirm the step heights of the fabricated step‐edges on fresh, revived, and degraded MgO substrates. After the treatment, the surface roughness of MgO substrate has reduced from 56 to 1.06 nm which is comparable with the fresh MgO (100) substrate. The acquired values of critical temperatures for as‐deposited YBCO thin film on fresh and revived MgO substrates are 89.1 and 88.3 K, respectively, whereas these values are 85.8 and 85.7 K for the fabricated step‐edge junction microbridges on these deposited thin films. For both the fabricated step‐edge junction on the revived and fresh MgO substrate, the superconductor–normal metal–superconductor‐type JJ is confirmed.

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“…According to the research of Mitchell [2], the thin film deposited on a rough substrate exhibits a high surface roughness and poor performance, which induces a significant drop of Jc of both the film and the linkage section. The research results of Sangsub Kim [4], Dammak [5] and T.Harada [6] showed that the micro-structure and crystallinity of the ferroelectric thin film deposited on MgO(100) are affected by the surface microstructure or surface profile of the MgO formed through cleavage, polish and anneal. So it is very important for producing high quality thin film not only to choose the right substrate material, but also to obtain the high quality substrate surface.…”

Section: Introductionmentioning

confidence: 99%

Theoretical Analysis and Experimental Verification of Triangular Fracture Defects of MgO Single Crystal Substrate in Lapping or Polishing Process

Wang

Kang

Jin

et al. 2007

KEM

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MgO single crystal is mainly used as substrate for high temperature superconductor film. Surface quality of MgO substrate has significant effect on the function of high temperature superconductor film. MgO single crystal is a typical hard and brittle material, and is easily cleaved along the {100} face, so some defects are always generated on the substrate surface while lapping and polishing, which badly affects the surface quality of the substrate. In this paper, a kind of typical defect, the triangular fracture defect which is on the substrate surface after lapping and polishing, is analyzed in detail. According to the structure characteristics of the MgO single crystal, and based on the dislocation reaction theory, a formation mechanism of the triangular fracture defect in lapping and polishing processes is explored. Through the single grain scratch test in different directions on the polished surface of MgO{100} single crystal substrates, the formation mechanism of triangular fracture defect in lapping and polishing processes is verified. And during the scratch test, the plastic flow of the MgO single crystal material beside the scratch was observed.

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Study of charging phenomena in MgO single crystal: effect of polishing, annealing temperature and crystallographic orientation

Cited by 13 publications

References 7 publications

Dielectric and Structural Properties of Poly(vinylidene fluoride) (PVDF) and Poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE) Filled with Magnesium Oxide Nanofillers

Dielectric and Structural Properties of Poly(vinylidene fluoride) (PVDF) and Poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE) Filled with Magnesium Oxide Nanofillers

Fabrication and Transport Characteristics of YBCO Step‐Edge‐Based Josephson Junction on Revived MgO Substrate

Theoretical Analysis and Experimental Verification of Triangular Fracture Defects of MgO Single Crystal Substrate in Lapping or Polishing Process

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