Study of CZTSSe-Based Solar Cells with Different ETMs by SCAPS

Et-taya, Lhoussayne; Benami, Abdellah; Ouslimane, Touria

doi:10.3390/su14031916

Cited by 22 publications

(9 citation statements)

References 16 publications

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“…The shunt and series resistances were kept fixed at 1000 Ω and 1.5Ω, respectively during the entire simulation. The values of various parameters of the devices are taken from already reported works [13], [14], [15], [16], [17] and a few by reasonable assumptions as listed in Table 1…”

Section: Simulation Methodologymentioning

confidence: 99%

Numerical Study on the Effect of ZrS₂ on CZTSSe Photovoltaic Device Using SCAPS 1-D

Thomas

2022

IOP Conf. Ser.: Mater. Sci. Eng.

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CZTSSe based photovoltaic devices are gaining attention recently. They have many favorable properties like less costly and simple manufacturing processes, comparably nontoxic and easily available constituent components, and most importantly, excellent optoelectronic properties. Herein, we propose a CZTSSe based solar cell and aim to report for the first time a new material for the buffer layer: Zirconium Sulphide (ZrS2). The suggested device here is Al-doped ZnO(AZO)/ZrS2/CZTSSe/Mo. Here we use a numerical simulation package called Solar Cell Capacitance Simulator or SCAPS 1-D to analyze the output of the device with varying input parameters. To explore the impact of the ZrS2 layer on the functioning of the suggested device,its donor density was changed from 1012 cm−3 to 1016 cm−3. The simulations indicate that the donor density doesn’t particularly affect the output parameters of the device within the tested range. Besides the influence of the ZrS2 layer, a study was also carried out to find the role of operating temperature and the intrinsic layer on the proposed device. Most of the parameters declined rapidly with the increase in temperature while they remain constant with the change in ZnO thickness. Efficiency dropped to 9% at 500K from 23 % at 300K and the efficiency of the device remained 23% with the variation of intrinsic layer thickness. As per the simulation results, we can conclude that ZrS2 is an appropriate material as buffer layer for photovoltaic devices with a CZTSSe absorber layer.

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Section: Simulation Methodologymentioning

confidence: 99%

Numerical Study on the Effect of ZrS₂ on CZTSSe Photovoltaic Device Using SCAPS 1-D

Thomas

2022

IOP Conf. Ser.: Mater. Sci. Eng.

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“…In the presence of sunlight, the solar cells generate pairs of electron-hole pairs within the absorber layer, and these pairs are subsequently transported in opposite directions toward the front and back contacts. The alignment of band edges at the CZTSSe/Ag 2 S heterojunction interface is an important physical characteristic that has a substantial influence on the conduction of photogenerated carriers and ultimately affects the solar cell's performance [43].To achieve high efficiency, it is crucial to attain a spike-like conduction band variation ranging from 0 to 0.4 eV. The electron affinity level of CZTSSe is 4.1 eV, while Ag 2 S, Cu 2 O, and ZnO:Al have electron affinities level of 4.5 eV, 3.2 eV, and 4.5 eV, respectively.…”

Section: Structure Of the Solar Cellmentioning

confidence: 99%

“…This can be attributed to an elevated dark saturation current, inducing an enhancement in charge carrier recombination and reduces the open-circuit voltage. The relationship between V OC and J SC is established using the continuity equation, equation (5) [43], which is employed in the SCAPS-1D software. This equation helps establish the correlation between the open-circuit voltage and the current density.…”

Section: Optimizing the Absorber Layer Thicknessmentioning

confidence: 99%

Investigating Ag₂S quantum dot buffer layer in CZTSSe photovoltaics for enhanced performance

Yadav,

Chauhan,

Mishra

et al. 2023

Phys. Scr.

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This study focuses on optimizing the performance of CZTSSe photovoltaic (PV) cells by incorporating an Ag2S quantum dot (QD) buffer layer. CZTSSe, with its significant Direct bandgap (1–1.5 eV) and the absorption coefficient (>104 cm-1), shows promise for efficient visible-range light absorption. Ag2S quantum dots, known in terms of their favourable attributes, such as high absorption, low solubility, and minimal surface recombination, are explored as a buffer layer material. The effects of the Ag2S quantum dot (QD) buffer layer on the optical and electrical characteristics of CZTSSe photovoltaic (PV) cells are comprehensively examined using simulation characterization. Key parameters, including Short-circuit (JSC), fill factor (FF), open-circuit voltage (VOC), and power conversion efficiency (PCE), are analyzed to validate device characteristics.The SCAPS-1d simulator is employed for performance assessment and enhancement through tuning device parameters such as energy bandgap, absorber layer thickness, buffer layer thickness, defect density, and acceptor concentrations of the absorber and hole transport layer (HTL), and donor concentrations of the buffer. Additionally, temperature, as well as series-shunt resistance's influence on device effectiveness, are explored. The study aims to maximize light absorption, enhance charge conduction, reduce carrier loss due to recombination, and upgrade CZTSSe PV cells' overall performance. The CZTSSe solar unit achieves its highest PCE of 27.56% when employing an Ag2S buffer layer and Cu2O hole transport layer. The study provides valuable knowledge about the optimization of CZTSSe solar cells and the potential benefits of utilizing Ag2S QD in the role of buffer layer material. This research contributes to the understanding of enhancing CZTSSe PV cell performance through the incorporation of Ag2S QD buffer layers and presents pragmatic directives that can be employed to facilitate the progression of CZTSSe-based photovoltaic devices.

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“…1. The physical parameters and values used in the PSC simulation are summarized in Table 1, collected from previously reported works [1,8,[10][11][12][13]. Other input parameters not included in Table 1 are: thermal velocities of holes and electrons considered are 110 7 cms -1 [12], the energy distribution is Gaussian with a characteristic energy of 0.1 eV [13].…”

Section: Parameters Of a Simulated Device Structurementioning

confidence: 99%

“…One day of solar radiation can provide us 10,000 times more energy than the entire planet needs. This enormous potential can be exploited by solar cells that convert solar energy into electrical power based on the photovoltaic effect [1].…”

Section: Introductionmentioning

confidence: 99%

Comparison of the Effects of ZnO and TiO2 on the Performance of Perovskite Solar Cells via SCAPS-1D Software Package

Benami¹,

Ouslimane²,

Et-taya³

et al. 2022

J. Nano- Electron. Phys.

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In the quest for a highly efficient and low-cost material for fourth-generation photovoltaic devices, organic-inorganic hybrid perovskite solar cells are gaining popularity as a new absorber. Currently, two types of solid-state perovskite device architecture are being researched. These are mesoporous and planar heterojunctions. Both structures are made up of five layers: transparent conductive oxide, electron transport material, perovskite active layer, hole transporting material, and back contact. In this work, the key characteristics of perovskite solar cells with zinc oxide (ZnO) and titanium dioxide (TiO2) as electron transport material are simulated using the one-dimensional Solar Cell Capacitance Simulator (SCAPS-1D). TiO2 is the most commonly used material in perovskite solar cells, but its deposition requires high temperature, which limits the commercial processing of flexible devices. ZnO is widely used in the semiconductor industry and is considered an alternative to TiO2 due to its excellent electron transport. Simulation studies focus on the thickness, carrier diffusion length, and band gap energy of the absorber layer, which affect the photovoltaic properties of solar cell devices. The effect of working temperature is also examined. According to the findings, the use of ZnO as an electron transport material improves the cell efficiency compared to TiO2. Because of the lower edge of the conduction band, which facilitates the transport of photogenerated electrons in a perovskite solar cell, the best efficiency got from a structure using ZnO layer is 25.40 % at ambient temperature. The simulation results show that an absorber thickness of 500 nm is appropriate for achieving high efficiency.

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Study of CZTSSe-Based Solar Cells with Different ETMs by SCAPS

Cited by 22 publications

References 16 publications

Numerical Study on the Effect of ZrS₂ on CZTSSe Photovoltaic Device Using SCAPS 1-D

Numerical Study on the Effect of ZrS₂ on CZTSSe Photovoltaic Device Using SCAPS 1-D

Investigating Ag₂S quantum dot buffer layer in CZTSSe photovoltaics for enhanced performance

Comparison of the Effects of ZnO and TiO2 on the Performance of Perovskite Solar Cells via SCAPS-1D Software Package

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Study of CZTSSe-Based Solar Cells with Different ETMs by SCAPS

Cited by 22 publications

References 16 publications

Numerical Study on the Effect of ZrS2 on CZTSSe Photovoltaic Device Using SCAPS 1-D

Numerical Study on the Effect of ZrS2 on CZTSSe Photovoltaic Device Using SCAPS 1-D

Investigating Ag2S quantum dot buffer layer in CZTSSe photovoltaics for enhanced performance

Comparison of the Effects of ZnO and TiO2 on the Performance of Perovskite Solar Cells via SCAPS-1D Software Package

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Product

Resources

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Numerical Study on the Effect of ZrS₂ on CZTSSe Photovoltaic Device Using SCAPS 1-D

Numerical Study on the Effect of ZrS₂ on CZTSSe Photovoltaic Device Using SCAPS 1-D

Investigating Ag₂S quantum dot buffer layer in CZTSSe photovoltaics for enhanced performance