Study of damage formation and annealing of implanted III-nitride semiconductors for optoelectronic devices

Faye, Djibril; Fialho, M.; Magalhães, S.; Alves, E.; Sédrine, N. Ben; Rodrigues, Joana; Correia, M. R.; Monteiro, T.; Boćkowski, M.; Hoffmann, Veit; Weyers, M.; Lorenz, K.

doi:10.1016/j.nimb.2016.03.028

Cited by 17 publications

(23 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…38 According to Vegard's law 39 and considering the effect of biaxial strain by using Poisson's law, 40 the lattice parameters a ¼ 3.1778 Å and c ¼ 5.1547 Å correspond to x ¼ 0. 15. The results of deformation as a function of depth were obtained by simulating and fitting the symmetric (0002) 2h-x scans using the dynamical theory of XRD.…”

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

Impact of implantation geometry and fluence on structural properties of AlxGa1-xN implanted with thulium

Fialho

Magalhães

Chauvat

et al. 2016

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

Al x Ga 1-x N (x ¼ 0.15 and 0.77) films, grown by halide vapor phase epitaxy, were implanted with 300 keV Tm ions. Implantation damage accumulation is investigated with Rutherford backscattering spectrometry/channeling (RBS/C), transmission electron microscopy (TEM), and high resolution X-ray diffraction (XRD). Distinct damage behavior for samples with different AlN contents was found. Surface nanocrystallization occurs for samples with x ¼ 0.15, similar to implantation effects observed in GaN. Samples with x ¼ 0.77 approach the behavior of AlN. In particular, surface nanocrystallization is suppressed and the depth range of the stacking fault network, typical for implanted III-nitrides, is decreased. The crystalline quality of the sample with x ¼ 0.15 was investigated to compare random and channeled implantation, showing less concentration of damage but with a higher range for channeled implantation. Surprisingly, the strain field caused by the implantation reaches much deeper into the sample than the defect profiles measured by RBS/C and TEM. This is attributed to the fact that XRD is much more sensitive to low defect densities caused by ions which are channeled to deep regions of the sample. Published by AIP Publishing.

show abstract

Section: Methodsmentioning

confidence: 99%

“…14 Recently, Faye et al showed the first results on an n-GaN/n-AlGaN/p-GaN LED structure using implantation of Eu ions to achieve red emission. 15 Although achieving photoluminescence of the RE ions, the electric properties of the LED were degraded by the high temperature post-implant annealing.…”

mentioning

confidence: 99%

Impact of implantation geometry and fluence on structural properties of AlxGa1-xN implanted with thulium

Fialho

Magalhães

Chauvat

et al. 2016

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

show abstract

“…The annealing temperature is a parameter of utmost importance for device development and performance because it can affect the contribution of the different Eu 3+ centers [30], as defined here by the ratio IEu2/IEu1. Furthermore, it was demonstrated that the electrical properties of Eu 3+ -implanted/annealed diode structure degrade when subjected to high temperature and high pressure annealing at 1400 ℃ [47]. For GaN:Eu 3+ layers capped with AlN, it was reported that the Eu2 center is predominant for annealing temperatures of 1300 ℃ [88], while an opposite behavior was recently reported in AlN:Eu 3+ NWs showing that Eu2 is favored for rapid thermal annealing treatments at 1000 ℃ [26].…”

Section: Above and Below Bandgap Excitation: The 5 D0 → 7 F2 Transitionmentioning

confidence: 98%

“…As an alternative to in situ RE incorporation, ex-situ ion implantation constitutes a suitable method to obtain a controlled doping profile with concentration even beyond solubility limits [18,25,26,32,[42][43][44][45][46][47]. This technique requires post-implantation thermal annealing to recover the implantation-induced damage and to optically activate the RE ions.…”

Section: Introductionmentioning

confidence: 99%

Eu3+ optical activation engineering in Al Ga1-N nanowires for red solid-state nano-emitters

Cardoso

Jacopin

Faye

et al. 2021

Applied Materials Today

Self Cite

View full text Add to dashboard Cite

In this work, Eu 3+ -implanted and annealed AlxGa1-xN (0 ≤ x ≤ 1) nanowires (NWs) grown on GaN NW template on Si (111) substrates by plasma-assisted molecular beam epitaxy are studied by µ-Raman, cathodoluminescence (CL), nano-CL, and temperature-dependent steady-state photoluminescence. The preferential location of the Eu 3+ -implanted ions is found to be at the AlxGa1-xN top-section. The recovery of the as-grown crystalline properties is achieved after rapid thermal annealing (RTA). After RTA, the red emission of the Eu 3+ ions is attained for all the samples with below and above bandgap excitation. The 5 D0 → 7 F2 transition is the most intense one, experiencing a redshift with increasing AlN nominal content (x) from GaN to AlN NWs. Moreover, AlN nominal content and annealing temperature alters its spectral shape suggesting the presence of at least two distinct optically active Eu 3+ centers (Eu1 and Eu2). Thermal quenching of the Eu 3+ ion luminescence intensity, I, is found for all the samples from 14 K to 300 K, being the emission of Eu 3+ -implanted AlN NWs after RTA at 1200 ℃ the most stable (I300 K/I14 K ~80%). The GaN/AlN interface in this sample is also found to have a key role in the Eu 3+ optical activation.

show abstract

“…Such annealing conditions achieved a recovery of the original AlN crystalline structure as confirmed by Raman analysis. For both samples, the red Eu 3+ intra-4f 6 luminescence was demonstrated, where the 5 D0  7 F2 transition at 624 nm is the most intense. Two well-resolved Eu optically active centers were observed in the present AlN NW and designated as Eu1 and Eu2, due to their similar spectral shape when compared to those observed in GaN layers [L. Bodiou .…”

mentioning

confidence: 93%

Multiple optical centers in Eu-implanted AlN nanowires for solid-state lighting applications

Cardoso

Sédrine

Alves

et al. 2018

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

A detailed spectroscopic analysis of Eu3+ implanted and annealed AlN nanowires (NWs) grown by plasma-assisted molecular beam epitaxy is presented by using micro-Raman, temperature-dependent steady-state photoluminescence, and time-resolved photoluminescence. Two different annealing temperatures (1000 °C and 1200 °C) were used. Such annealing conditions achieved a recovery of the original AlN crystalline structure as confirmed by Raman analysis. For both samples, the red Eu3+ intra-4f 6 luminescence was demonstrated, where the 5D0 → 7F2 transition at 624 nm is the most intense. Two well-resolved Eu optically active centers were observed in the present AlN NWs and designated as Eu1 and Eu2, due to their similar spectral shape when compared to those observed in GaN layers [Bodiou et al., Opt. Mater. 28, 780 (2006); Roqan et al., Phys. Rev. B 81, 085209 (2010)]. Their behavior was found to depend on the annealing temperature. Photoluminescence studies reveal that at 14 K, Eu2 is dominant for the lower annealing temperature, while Eu1 is dominant for the highest annealing temperature. Moreover, at room temperature, Eu1 center was found to be the dominant for both samples. Indeed, the luminescence intensity of the 5D0 → 7F2 transition exhibits a lower thermal quenching for the samples annealed at the highest temperature (∼80% for the sample annealed at 1200 °C and ∼50% for the sample annealed at 1000 °C) boosting their potential use as efficient red emitters.

show abstract

Study of damage formation and annealing of implanted III-nitride semiconductors for optoelectronic devices

Cited by 17 publications

References 22 publications

Impact of implantation geometry and fluence on structural properties of AlxGa1-xN implanted with thulium

Impact of implantation geometry and fluence on structural properties of AlxGa1-xN implanted with thulium

Eu3+ optical activation engineering in Al Ga1-N nanowires for red solid-state nano-emitters

Multiple optical centers in Eu-implanted AlN nanowires for solid-state lighting applications

Contact Info

Product

Resources

About