Study of defects in diamond Schottky barrier diode by photocurrent spectroscopy

Abstract

Defects in vertical diamond Schottky barrier diodes have been investigated by photocurrent spectroscopy in supercontinuum light photon energy ranging from 1.24 to 3.1 eV, and from 170 to 296 K. The photocurrent spectra exhibit three thresholds located around 1.3, 2.2 and 2.5 eV, which are related to defects energy levels in the active layer of diamond Schottky diodes (a slightly doped boron layer). Although the origin of the reported defects is still under discussion, they can be ascribed to hydrogen and nitrogen related defects. Moreover, the generated photocurrent can be explained by a two-photon process.

Photo-induced conductivity transient in n-type β-(Al0.16Ga0.84)2O3 and β-Ga2O3

“…Photo-induced current in the UID β-Ga 2 O 3 layer and β-(Al 0.16 Ga 0.84 ) 2 O 3 /Ga 2 O 3 stack (see Fig. 1) was measured using a homemade photocurrent experimental setup 26) comprising of a Keithley SMU 2634b electrical measurements unit, supercontinuum light source (wavelength range: 400-1100 nm), SOLAR TII monochromator, and cryostat (77-300 K). Moreover, the transient photocurrent was measured using an electronically controlled light shutter (generation of light pulse), which was synchronized with the SMU 2634b measurements unit.…”

Study of ion-implanted nitrogen related defects in diamond Schottky barrier diode by transient photocapacitance and photoluminescence spectroscopy

“…Besides, since the NV center is optically active, the identification of the charge state of NV centers can be realized by PL spectoscopy 8,22) . We have previously used transient photocapacitance spectroscopy to detect defects in diamond Schottky diodes 23) . Here, by applying different reverse bias, the TPC spectrums and PL of ion-implanted diamond films were measured.…”