1999
DOI: 10.1016/s0925-9635(98)00260-x
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Study of diamond films grown at low temperatures and pressures by ECR-assisted CVD

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Cited by 6 publications
(2 citation statements)
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“…The Bragg reflections characteristic of 〈111〉 and 〈400〉 diamond lattice planes were obtained for all the films (data not shown). Control experiments to grow diamond directly on Mo, Si, and quartz without nFeO or diamond seeding were unsuccessful for deposition times of 6 h, as expected, except for the formation of a MoC or a SiC surface layer according to XRD [ 13 ].…”
Section: Resultsmentioning
confidence: 99%
“…The Bragg reflections characteristic of 〈111〉 and 〈400〉 diamond lattice planes were obtained for all the films (data not shown). Control experiments to grow diamond directly on Mo, Si, and quartz without nFeO or diamond seeding were unsuccessful for deposition times of 6 h, as expected, except for the formation of a MoC or a SiC surface layer according to XRD [ 13 ].…”
Section: Resultsmentioning
confidence: 99%
“…Recently, much research has been carried out for synthesizing the high quality diamond thin-films using microwave plasma enhanced chemical vapor deposition (MWPCVD) [13][14][15][16][17], radio frequency (RF), DC plasma CVD [18,19], electron cyclotron resonance (ECR) plasma CVD [20][21][22], the hot filament CVD [23,24], the ion beam deposition method (IBD) [25], laser ablation, combustion flame, etc [26][27][28]. Generally, the low pressure CVD processes for synthesis of diamond films have been used with the activating gas phase carbon-containing precursor of CH 4 .…”
Section: Introductionmentioning
confidence: 99%